JPS5323270A - Formation method of schottky diode electrodes - Google Patents

Formation method of schottky diode electrodes

Info

Publication number
JPS5323270A
JPS5323270A JP9735976A JP9735976A JPS5323270A JP S5323270 A JPS5323270 A JP S5323270A JP 9735976 A JP9735976 A JP 9735976A JP 9735976 A JP9735976 A JP 9735976A JP S5323270 A JPS5323270 A JP S5323270A
Authority
JP
Japan
Prior art keywords
formation method
schottky diode
diode electrodes
electrodes
evaporating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9735976A
Other languages
Japanese (ja)
Other versions
JPS5932890B2 (en
Inventor
Takeshi Ito
Tsutomu Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9735976A priority Critical patent/JPS5932890B2/en
Publication of JPS5323270A publication Critical patent/JPS5323270A/en
Publication of JPS5932890B2 publication Critical patent/JPS5932890B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:After evaporating the given metals in three layers one by one on the barrier metal, they are heated at 350-500 deg.C, to prevent the diode's characteristics from being degraded by soldering.
JP9735976A 1976-08-13 1976-08-13 Electrode formation method for shot diode Expired JPS5932890B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9735976A JPS5932890B2 (en) 1976-08-13 1976-08-13 Electrode formation method for shot diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9735976A JPS5932890B2 (en) 1976-08-13 1976-08-13 Electrode formation method for shot diode

Publications (2)

Publication Number Publication Date
JPS5323270A true JPS5323270A (en) 1978-03-03
JPS5932890B2 JPS5932890B2 (en) 1984-08-11

Family

ID=14190293

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9735976A Expired JPS5932890B2 (en) 1976-08-13 1976-08-13 Electrode formation method for shot diode

Country Status (1)

Country Link
JP (1) JPS5932890B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6049859A (en) * 1983-08-30 1985-03-19 Asahi Glass Co Ltd Agent for preventing creeping up of flux for soldering
JP2006187940A (en) * 2005-01-06 2006-07-20 Canon Chemicals Inc Manufacturing method of toner supply roller
KR20130088151A (en) 2010-09-13 2013-08-07 유니마테크 가부시키가이샤 Fluorine-containing copolymer
KR20210013174A (en) 2018-06-14 2021-02-03 유니마테크 가부시키가이샤 Perfluoropolyetherphosphate ester, preparation method thereof, and surface treatment agent using it as an active ingredient

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6049859A (en) * 1983-08-30 1985-03-19 Asahi Glass Co Ltd Agent for preventing creeping up of flux for soldering
JPS6362315B2 (en) * 1983-08-30 1988-12-01
JP2006187940A (en) * 2005-01-06 2006-07-20 Canon Chemicals Inc Manufacturing method of toner supply roller
KR20130088151A (en) 2010-09-13 2013-08-07 유니마테크 가부시키가이샤 Fluorine-containing copolymer
KR20210013174A (en) 2018-06-14 2021-02-03 유니마테크 가부시키가이샤 Perfluoropolyetherphosphate ester, preparation method thereof, and surface treatment agent using it as an active ingredient

Also Published As

Publication number Publication date
JPS5932890B2 (en) 1984-08-11

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