JPH06310718A - Ｍｏｓｆｅｔ素子の製造方法 - Google Patents

Ｍｏｓｆｅｔ素子の製造方法

Info

Publication number
JPH06310718A
JPH06310718A JP6038385A JP3838594A JPH06310718A JP H06310718 A JPH06310718 A JP H06310718A JP 6038385 A JP6038385 A JP 6038385A JP 3838594 A JP3838594 A JP 3838594A JP H06310718 A JPH06310718 A JP H06310718A
Authority
JP
Japan
Prior art keywords
region
forming
film
oxide film
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP6038385A
Other languages
English (en)
Japanese (ja)
Inventor
Jeonguk Han
晶▲いく▼ 韓
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JPH06310718A publication Critical patent/JPH06310718A/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/292—Non-planar channels of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/025—Manufacture or treatment forming recessed gates, e.g. by using local oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0128—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0151—Manufacturing their isolation regions

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Element Separation (AREA)
JP6038385A 1993-03-10 1994-03-09 Ｍｏｓｆｅｔ素子の製造方法 Withdrawn JPH06310718A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR93P3575 1993-03-10
KR1019930003575A KR940022917A (ko) 1993-03-10 1993-03-10 채널로부터 분리된 드레인을 구비한 모스에프이티(mosfet) 소자의 제조 방법

Publications (1)

Publication Number Publication Date
JPH06310718A true JPH06310718A (ja) 1994-11-04

Family

ID=19351909

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6038385A Withdrawn JPH06310718A (ja) 1993-03-10 1994-03-09 Ｍｏｓｆｅｔ素子の製造方法

Country Status (5)

Country Link
EP (1) EP0615282A3 (enExample)
JP (1) JPH06310718A (enExample)
KR (1) KR940022917A (enExample)
CN (1) CN1101457A (enExample)
TW (1) TW232087B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005136366A (ja) * 2003-10-28 2005-05-26 Dongbu Electronics Co Ltd 半導体素子のトランジスタ製造方法
JP2008153346A (ja) * 2006-12-15 2008-07-03 Seiko Instruments Inc 半導体装置およびその製造方法
JP2014175373A (ja) * 2013-03-06 2014-09-22 Ricoh Co Ltd 半導体装置及びその製造方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2967745B2 (ja) * 1997-02-06 1999-10-25 日本電気株式会社 半導体装置の製造方法
GB2354880A (en) * 1999-09-30 2001-04-04 Mitel Semiconductor Ltd Metal oxide semiconductor field effect transistors
CN102054699B (zh) * 2009-11-05 2012-07-25 中芯国际集成电路制造(上海)有限公司 改善半导体器件结深特性的方法
CN112151616B (zh) * 2020-08-20 2022-12-16 中国科学院微电子研究所 一种堆叠mos器件及其制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54146584A (en) * 1978-05-09 1979-11-15 Mitsubishi Electric Corp Manufacture of semiconductor device
US4903107A (en) * 1986-12-29 1990-02-20 General Electric Company Buried oxide field isolation structure with composite dielectric
US5116771A (en) * 1989-03-20 1992-05-26 Massachusetts Institute Of Technology Thick contacts for ultra-thin silicon on insulator films
US5108937A (en) * 1991-02-01 1992-04-28 Taiwan Semiconductor Manufacturing Company Method of making a recessed gate MOSFET device structure
JPH05109762A (ja) * 1991-05-16 1993-04-30 Internatl Business Mach Corp <Ibm> 半導体装置及びその製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005136366A (ja) * 2003-10-28 2005-05-26 Dongbu Electronics Co Ltd 半導体素子のトランジスタ製造方法
JP2008153346A (ja) * 2006-12-15 2008-07-03 Seiko Instruments Inc 半導体装置およびその製造方法
JP2014175373A (ja) * 2013-03-06 2014-09-22 Ricoh Co Ltd 半導体装置及びその製造方法

Also Published As

Publication number Publication date
EP0615282A3 (en) 1996-12-11
EP0615282A2 (en) 1994-09-14
CN1101457A (zh) 1995-04-12
TW232087B (enExample) 1994-10-11
KR940022917A (ko) 1994-10-22

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Legal Events

Date Code Title Description
A300 Application deemed to be withdrawn because no request for examination was validly filed

Free format text: JAPANESE INTERMEDIATE CODE: A300

Effective date: 20010605