JPH0627651Y2 - 膜形成用反応装置 - Google Patents
膜形成用反応装置Info
- Publication number
- JPH0627651Y2 JPH0627651Y2 JP12338189U JP12338189U JPH0627651Y2 JP H0627651 Y2 JPH0627651 Y2 JP H0627651Y2 JP 12338189 U JP12338189 U JP 12338189U JP 12338189 U JP12338189 U JP 12338189U JP H0627651 Y2 JPH0627651 Y2 JP H0627651Y2
- Authority
- JP
- Japan
- Prior art keywords
- shutter
- reaction chamber
- substrate
- inlet
- outlet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12338189U JPH0627651Y2 (ja) | 1989-10-20 | 1989-10-20 | 膜形成用反応装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12338189U JPH0627651Y2 (ja) | 1989-10-20 | 1989-10-20 | 膜形成用反応装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0363573U JPH0363573U (US07923587-20110412-C00022.png) | 1991-06-20 |
JPH0627651Y2 true JPH0627651Y2 (ja) | 1994-07-27 |
Family
ID=31671362
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12338189U Expired - Lifetime JPH0627651Y2 (ja) | 1989-10-20 | 1989-10-20 | 膜形成用反応装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0627651Y2 (US07923587-20110412-C00022.png) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8460466B2 (en) * | 2010-08-02 | 2013-06-11 | Veeco Instruments Inc. | Exhaust for CVD reactor |
WO2012092064A1 (en) | 2010-12-30 | 2012-07-05 | Veeco Instruments Inc. | Wafer processing with carrier extension |
US9388493B2 (en) | 2013-01-08 | 2016-07-12 | Veeco Instruments Inc. | Self-cleaning shutter for CVD reactor |
-
1989
- 1989-10-20 JP JP12338189U patent/JPH0627651Y2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0363573U (US07923587-20110412-C00022.png) | 1991-06-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI238856B (en) | Buffer chamber and method for integrating physical and chemical vapor deposition chambers together in a processing system | |
US7654291B2 (en) | Purging apparatus and purging method | |
US5421889A (en) | Method and apparatus for inverting samples in a process | |
JPH0627651Y2 (ja) | 膜形成用反応装置 | |
JPH11145269A (ja) | 密閉式基板用カセット及びそれを用いたデバイスの製造方法 | |
JPH0225573A (ja) | 処理装置 | |
JP3759010B2 (ja) | 清掃装置および清掃方法と清浄度診断方法ならびに清掃装置を用いた半導体製造装置 | |
JPS5889944A (ja) | プラズマcvd装置 | |
CN209029338U (zh) | 半导体工艺设备 | |
JPH11302829A (ja) | 真空装置の真空室汚染防止装置 | |
JPH10303277A (ja) | 扉開閉装置 | |
JPH03219075A (ja) | スパッタリング装置のターゲット出入装置 | |
JPH0426760A (ja) | スパッタリング装置 | |
JPS60248876A (ja) | スパツタ装置 | |
JPH03145124A (ja) | ドライエッチング装置 | |
JP3215984B2 (ja) | 真空装置及びその使用方法 | |
JPH06333854A (ja) | 成膜装置 | |
JP3540978B2 (ja) | 半導体ウェハの熱処理装置 | |
JPH062136A (ja) | 枚葉式成膜装置 | |
JPH01181519A (ja) | 縮小投影露光装置 | |
JPS59208067A (ja) | 連続スパッタ装置 | |
JPH0353063A (ja) | スパッタリング装置 | |
JP2814864B2 (ja) | エアーロック室、イオン注入装置、並びに、エアーロック室のクリーニング方法 | |
JPH1092724A (ja) | ロードロック室 | |
JPH04240726A (ja) | プラズマドライエッチング装置 |