JPH0621235Y2 - 化合物半導体気相成長装置 - Google Patents

化合物半導体気相成長装置

Info

Publication number
JPH0621235Y2
JPH0621235Y2 JP1988037381U JP3738188U JPH0621235Y2 JP H0621235 Y2 JPH0621235 Y2 JP H0621235Y2 JP 1988037381 U JP1988037381 U JP 1988037381U JP 3738188 U JP3738188 U JP 3738188U JP H0621235 Y2 JPH0621235 Y2 JP H0621235Y2
Authority
JP
Japan
Prior art keywords
susceptor
compound semiconductor
vapor phase
phase growth
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1988037381U
Other languages
English (en)
Japanese (ja)
Other versions
JPH01140816U (enrdf_load_stackoverflow
Inventor
春典 坂口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP1988037381U priority Critical patent/JPH0621235Y2/ja
Publication of JPH01140816U publication Critical patent/JPH01140816U/ja
Application granted granted Critical
Publication of JPH0621235Y2 publication Critical patent/JPH0621235Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP1988037381U 1988-03-22 1988-03-22 化合物半導体気相成長装置 Expired - Lifetime JPH0621235Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1988037381U JPH0621235Y2 (ja) 1988-03-22 1988-03-22 化合物半導体気相成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1988037381U JPH0621235Y2 (ja) 1988-03-22 1988-03-22 化合物半導体気相成長装置

Publications (2)

Publication Number Publication Date
JPH01140816U JPH01140816U (enrdf_load_stackoverflow) 1989-09-27
JPH0621235Y2 true JPH0621235Y2 (ja) 1994-06-01

Family

ID=31263962

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1988037381U Expired - Lifetime JPH0621235Y2 (ja) 1988-03-22 1988-03-22 化合物半導体気相成長装置

Country Status (1)

Country Link
JP (1) JPH0621235Y2 (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0744156B2 (ja) * 1988-10-18 1995-05-15 古河電気工業株式会社 半導体薄膜気相成長装置
JP2013058741A (ja) * 2011-08-17 2013-03-28 Hitachi Cable Ltd 金属塩化物ガス発生装置、ハイドライド気相成長装置、及び窒化物半導体テンプレート
JP2015153983A (ja) * 2014-02-18 2015-08-24 東京エレクトロン株式会社 基板処理装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6421916A (en) * 1987-07-16 1989-01-25 Sony Corp Vapor growth apparatus

Also Published As

Publication number Publication date
JPH01140816U (enrdf_load_stackoverflow) 1989-09-27

Similar Documents

Publication Publication Date Title
US8133322B2 (en) Apparatus for inverted multi-wafer MOCVD fabrication
JPH0621235Y2 (ja) 化合物半導体気相成長装置
JP2733518B2 (ja) 化合物半導体膜の気相成長装置
JP7432465B2 (ja) 気相成長装置
JP3198956B2 (ja) ＧａＮの薄膜気相成長方法と薄膜気相成長装置
JPH02126632A (ja) 化合物半導体結晶層の気相成長方法及びそれに用いる反応管
JP3702403B2 (ja) 気相成長方法
JPH11329980A (ja) 有機金属気相成長装置およびそれを用いた有機金属気相成長法
JPH0773099B2 (ja) 半導体気相成長装置
JPS6122621A (ja) 気相成長方法
JPH0682619B2 (ja) 半導体成長装置
JPH01117315A (ja) 半導体薄膜結晶の気相成長方法
JPS612318A (ja) 半導体成長装置
CN105779970B (zh) 气体喷淋头和沉积装置
JP3010739B2 (ja) 化合物半導体結晶の成長方法及び装置
JP3252644B2 (ja) 気相成長方法及びその装置
JPH03280419A (ja) 化合物半導体薄膜の成長方法
JPS6278815A (ja) 気相成長方法
JPH0354193A (ja) 有機金属気相成長装置
JPH02297924A (ja) 化合物半導体の有機金属気相成長法
JPS59165416A (ja) 気相成長装置
JPS62291022A (ja) 気相成長装置
JPH0529637B2 (enrdf_load_stackoverflow)
JPS6381813A (ja) 気相成長方法
JPH01244612A (ja) 砒化ガリウムの気相成長方法及び気相成長装置