JPH06209009A - 半導体素子のゲート絶縁膜形成方法 - Google Patents

半導体素子のゲート絶縁膜形成方法

Info

Publication number
JPH06209009A
JPH06209009A JP5284230A JP28423093A JPH06209009A JP H06209009 A JPH06209009 A JP H06209009A JP 5284230 A JP5284230 A JP 5284230A JP 28423093 A JP28423093 A JP 28423093A JP H06209009 A JPH06209009 A JP H06209009A
Authority
JP
Japan
Prior art keywords
oxide film
film
gate insulating
forming
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5284230A
Other languages
English (en)
Japanese (ja)
Inventor
Hyun-Sang Hwang
ヒョン・サン・ヘン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Goldstar Electron Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Goldstar Electron Co Ltd filed Critical Goldstar Electron Co Ltd
Publication of JPH06209009A publication Critical patent/JPH06209009A/ja
Pending legal-status Critical Current

Links

Classifications

    • H10D64/01336—
    • H10P14/40—

Landscapes

  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP5284230A 1992-10-20 1993-10-20 半導体素子のゲート絶縁膜形成方法 Pending JPH06209009A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR19239/1992 1992-10-20
KR1019920019239A KR960002066B1 (ko) 1992-10-20 1992-10-20 옥시 나이트라이드 제조방법

Publications (1)

Publication Number Publication Date
JPH06209009A true JPH06209009A (ja) 1994-07-26

Family

ID=19341412

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5284230A Pending JPH06209009A (ja) 1992-10-20 1993-10-20 半導体素子のゲート絶縁膜形成方法

Country Status (4)

Country Link
JP (1) JPH06209009A (cg-RX-API-DMAC10.html)
KR (1) KR960002066B1 (cg-RX-API-DMAC10.html)
DE (1) DE4335457A1 (cg-RX-API-DMAC10.html)
TW (1) TW228613B (cg-RX-API-DMAC10.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8053826B2 (en) 2007-09-10 2011-11-08 Renesas Electronics Corporation Non-volatile semiconductor memory device and method of manufacturing the same
US8084315B2 (en) 2008-11-20 2011-12-27 Hitachi Kokusai Electric Inc. Method of fabricating non-volatile semiconductor memory device by using plasma film-forming method and plasma nitridation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8053826B2 (en) 2007-09-10 2011-11-08 Renesas Electronics Corporation Non-volatile semiconductor memory device and method of manufacturing the same
US8084315B2 (en) 2008-11-20 2011-12-27 Hitachi Kokusai Electric Inc. Method of fabricating non-volatile semiconductor memory device by using plasma film-forming method and plasma nitridation

Also Published As

Publication number Publication date
KR960002066B1 (ko) 1996-02-10
DE4335457A1 (de) 1994-04-21
KR940010209A (ko) 1994-05-24
TW228613B (cg-RX-API-DMAC10.html) 1994-08-21

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