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SK Hynix Inc
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Goldstar Electron Co Ltd
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Verfahren zur Herstellung von Hochdruck-Silicium-oxynitrid (Oxynitrid)-Gate-Dielektrika für Metalloxid Halbleiter (MOS)-Vorrichtungen mit polykristallinen P+-Silicium (Polysilicium)-Gate-Elektroden
Verfahren zur Herstellung eines PMOS-Feleffekttransistors, in einem Halbleiterbauelement, PMOS-Feldeffekttransistor, Polysiliziumschicht in einem Halbleiterbauelement und Verfahren zu deren Herstellung
Verfahren zur bildung einer verbindungszone in einem siliziumsubstrat bei der herstellung von n-kanal siliziumgate-bauelementen in integrierter mos-technologie
Verfahren zum Herstellen von p- und n-Kanal-MOS-Transistoren enthaltenden hochintegrierten Schaltungen mit aus einer dotierten Doppelschicht aus Polysilizium und Metallsilizid bestehenden Gateelektroden