JPH06202942A - フラッシュメモリ回路と操作方法 - Google Patents

フラッシュメモリ回路と操作方法

Info

Publication number
JPH06202942A
JPH06202942A JP4349672A JP34967292A JPH06202942A JP H06202942 A JPH06202942 A JP H06202942A JP 4349672 A JP4349672 A JP 4349672A JP 34967292 A JP34967292 A JP 34967292A JP H06202942 A JPH06202942 A JP H06202942A
Authority
JP
Japan
Prior art keywords
memory
data
address
bank
flash memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4349672A
Other languages
English (en)
Japanese (ja)
Inventor
Kenneth R Cowles
アール．カウルズ ケネス
Mark J Duewiger
ジェイ．デューウィガー マーク
Alex D Green
ディー．グリーン アレックス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Allen Bradley Co LLC
Original Assignee
Allen Bradley Co LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Allen Bradley Co LLC filed Critical Allen Bradley Co LLC
Publication of JPH06202942A publication Critical patent/JPH06202942A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G11C7/1018—Serial bit line access mode, e.g. using bit line address shift registers, bit line address counters, bit line burst counters
    • G11C7/1027—Static column decode serial bit line access mode, i.e. using an enabled row address stroke pulse with its associated word line address and a sequence of enabled bit line addresses
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G11C7/1045—Read-write mode select circuits

Landscapes

  • Read Only Memory (AREA)
  • Memory System (AREA)
JP4349672A 1991-11-12 1992-11-12 フラッシュメモリ回路と操作方法 Pending JPH06202942A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/790,833 US5263003A (en) 1991-11-12 1991-11-12 Flash memory circuit and method of operation
US790833 1991-11-12

Publications (1)

Publication Number Publication Date
JPH06202942A true JPH06202942A (ja) 1994-07-22

Family

ID=25151865

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4349672A Pending JPH06202942A (ja) 1991-11-12 1992-11-12 フラッシュメモリ回路と操作方法

Country Status (4)

Country Link
US (1) US5263003A (US06534493-20030318-C00166.png)
EP (1) EP0542205B1 (US06534493-20030318-C00166.png)
JP (1) JPH06202942A (US06534493-20030318-C00166.png)
DE (1) DE69226606T2 (US06534493-20030318-C00166.png)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH064399A (ja) * 1992-06-22 1994-01-14 Hitachi Ltd 半導体記憶装置
JP2000148583A (ja) * 1992-06-22 2000-05-30 Hitachi Ltd 半導体記憶装置
JP2000163314A (ja) * 1992-06-22 2000-06-16 Hitachi Ltd 半導体記憶装置
JP2002236612A (ja) * 2002-01-21 2002-08-23 Hitachi Ltd 半導体記憶装置
JP2004240993A (ja) * 2004-04-12 2004-08-26 Hitachi Ltd 半導体記憶装置
JP2005100470A (ja) * 2004-12-28 2005-04-14 Hitachi Ltd 半導体記憶装置
JP2005339581A (ja) * 2005-08-08 2005-12-08 Hitachi Ltd 半導体記憶装置
WO2006051779A1 (ja) * 2004-11-10 2006-05-18 Matsushita Electric Industrial Co., Ltd. 不揮発性記憶装置の制御方法、メモリコントローラ及び不揮発性記憶装置
JP2008108281A (ja) * 2008-01-10 2008-05-08 Renesas Technology Corp 半導体ディスク装置
US8001319B2 (en) 1992-06-22 2011-08-16 Solid State Storage Solutions, Inc. Semiconductor storage device
US9405674B2 (en) 2012-12-27 2016-08-02 Kabushiki Kaisha Toshiba Address generating circuit and address generating method

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US6230233B1 (en) 1991-09-13 2001-05-08 Sandisk Corporation Wear leveling techniques for flash EEPROM systems
JPH07176168A (ja) 1991-09-24 1995-07-14 Kalok Corp 大容量薄型ディスクドライブシステム、ディスクドライブアセンブリ及び組立方法
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JPS59185798U (ja) * 1983-05-27 1984-12-10 日本電気株式会社 情報書込装置
JPS61100848A (ja) * 1984-10-22 1986-05-19 Fuji Xerox Co Ltd マイクロコンピユ−タの主記憶装置
JPS61103258A (ja) * 1984-10-24 1986-05-21 インターナショナル　ビジネス　マシーンズ　コーポレーション 多重プロセッサ・システム
JPS61204751A (ja) * 1985-03-08 1986-09-10 Fujitsu Ltd 記憶装置制御方式
JPS61246997A (ja) * 1985-04-23 1986-11-04 Toshiba Corp 電気的消去・再書込み可能型読出し専用メモリ
JPS61273798A (ja) * 1985-05-29 1986-12-04 Mitsubishi Electric Corp 紫外線消去形プログラマブルｒｏｍの書込み試験方法
JPS6236799A (ja) * 1985-08-09 1987-02-17 Hitachi Ltd 不揮発性記憶装置
JPS62145339A (ja) * 1985-12-20 1987-06-29 Hitachi Ltd インタ−リ−ブ方式の記憶装置
JPS62188100A (ja) * 1986-02-13 1987-08-17 Mitsubishi Electric Corp 紫外線消去型プログラマブルｒｏｍの書込方法
JPS63124298A (ja) * 1986-11-13 1988-05-27 Matsushita Graphic Commun Syst Inc メモリ装置
JPH01263849A (ja) * 1988-04-15 1989-10-20 Hitachi Ltd メモリ制御装置
JPH02292798A (ja) * 1989-04-13 1990-12-04 Sundisk Corp フラッシュＥＥｐｒｏｍシステム

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JPS61100848A (ja) * 1984-10-22 1986-05-19 Fuji Xerox Co Ltd マイクロコンピユ−タの主記憶装置
JPS61103258A (ja) * 1984-10-24 1986-05-21 インターナショナル　ビジネス　マシーンズ　コーポレーション 多重プロセッサ・システム
JPS61204751A (ja) * 1985-03-08 1986-09-10 Fujitsu Ltd 記憶装置制御方式
JPS61246997A (ja) * 1985-04-23 1986-11-04 Toshiba Corp 電気的消去・再書込み可能型読出し専用メモリ
JPS61273798A (ja) * 1985-05-29 1986-12-04 Mitsubishi Electric Corp 紫外線消去形プログラマブルｒｏｍの書込み試験方法
JPS6236799A (ja) * 1985-08-09 1987-02-17 Hitachi Ltd 不揮発性記憶装置
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Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH064399A (ja) * 1992-06-22 1994-01-14 Hitachi Ltd 半導体記憶装置
JP2000148583A (ja) * 1992-06-22 2000-05-30 Hitachi Ltd 半導体記憶装置
JP2000163314A (ja) * 1992-06-22 2000-06-16 Hitachi Ltd 半導体記憶装置
US8001319B2 (en) 1992-06-22 2011-08-16 Solid State Storage Solutions, Inc. Semiconductor storage device
JP2002236612A (ja) * 2002-01-21 2002-08-23 Hitachi Ltd 半導体記憶装置
JP2004240993A (ja) * 2004-04-12 2004-08-26 Hitachi Ltd 半導体記憶装置
WO2006051779A1 (ja) * 2004-11-10 2006-05-18 Matsushita Electric Industrial Co., Ltd. 不揮発性記憶装置の制御方法、メモリコントローラ及び不揮発性記憶装置
JP2005100470A (ja) * 2004-12-28 2005-04-14 Hitachi Ltd 半導体記憶装置
JP2005339581A (ja) * 2005-08-08 2005-12-08 Hitachi Ltd 半導体記憶装置
JP2008108281A (ja) * 2008-01-10 2008-05-08 Renesas Technology Corp 半導体ディスク装置
US9405674B2 (en) 2012-12-27 2016-08-02 Kabushiki Kaisha Toshiba Address generating circuit and address generating method

Also Published As

Publication number Publication date
DE69226606D1 (de) 1998-09-17
US5263003A (en) 1993-11-16
EP0542205A2 (en) 1993-05-19
DE69226606T2 (de) 1999-03-25
EP0542205B1 (en) 1998-08-12
EP0542205A3 (US06534493-20030318-C00166.png) 1995-05-24

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