JPH0614479Y2 - 炭化ケイ素単結晶の液相エピタキシヤル成長装置 - Google Patents
炭化ケイ素単結晶の液相エピタキシヤル成長装置Info
- Publication number
- JPH0614479Y2 JPH0614479Y2 JP1986127461U JP12746186U JPH0614479Y2 JP H0614479 Y2 JPH0614479 Y2 JP H0614479Y2 JP 1986127461 U JP1986127461 U JP 1986127461U JP 12746186 U JP12746186 U JP 12746186U JP H0614479 Y2 JPH0614479 Y2 JP H0614479Y2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- silicon carbide
- crucible
- melt
- carbide single
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 47
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 46
- 239000013078 crystal Substances 0.000 title claims description 45
- 239000007791 liquid phase Substances 0.000 title claims description 11
- 239000000758 substrate Substances 0.000 claims description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 10
- 230000006698 induction Effects 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 229910002804 graphite Inorganic materials 0.000 claims description 6
- 239000010439 graphite Substances 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986127461U JPH0614479Y2 (ja) | 1986-08-20 | 1986-08-20 | 炭化ケイ素単結晶の液相エピタキシヤル成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986127461U JPH0614479Y2 (ja) | 1986-08-20 | 1986-08-20 | 炭化ケイ素単結晶の液相エピタキシヤル成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6333623U JPS6333623U (enrdf_load_stackoverflow) | 1988-03-04 |
| JPH0614479Y2 true JPH0614479Y2 (ja) | 1994-04-13 |
Family
ID=31022236
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1986127461U Expired - Lifetime JPH0614479Y2 (ja) | 1986-08-20 | 1986-08-20 | 炭化ケイ素単結晶の液相エピタキシヤル成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0614479Y2 (enrdf_load_stackoverflow) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5645893A (en) * | 1979-09-25 | 1981-04-25 | Nippon Telegr & Teleph Corp <Ntt> | Reducing method for defect of silicon single crystal |
| JPS58104096A (ja) * | 1981-10-23 | 1983-06-21 | Toshiba Ceramics Co Ltd | 単結晶シリコン引上装置 |
-
1986
- 1986-08-20 JP JP1986127461U patent/JPH0614479Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6333623U (enrdf_load_stackoverflow) | 1988-03-04 |
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