JPS6333623U - - Google Patents
Info
- Publication number
- JPS6333623U JPS6333623U JP1986127461U JP12746186U JPS6333623U JP S6333623 U JPS6333623 U JP S6333623U JP 1986127461 U JP1986127461 U JP 1986127461U JP 12746186 U JP12746186 U JP 12746186U JP S6333623 U JPS6333623 U JP S6333623U
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- silicon carbide
- single crystal
- silicon melt
- liquid phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 239000007791 liquid phase Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 2
- 230000006698 induction Effects 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910002804 graphite Inorganic materials 0.000 claims 1
- 239000010439 graphite Substances 0.000 claims 1
- 229910018540 Si C Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986127461U JPH0614479Y2 (ja) | 1986-08-20 | 1986-08-20 | 炭化ケイ素単結晶の液相エピタキシヤル成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986127461U JPH0614479Y2 (ja) | 1986-08-20 | 1986-08-20 | 炭化ケイ素単結晶の液相エピタキシヤル成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6333623U true JPS6333623U (enrdf_load_stackoverflow) | 1988-03-04 |
| JPH0614479Y2 JPH0614479Y2 (ja) | 1994-04-13 |
Family
ID=31022236
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1986127461U Expired - Lifetime JPH0614479Y2 (ja) | 1986-08-20 | 1986-08-20 | 炭化ケイ素単結晶の液相エピタキシヤル成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0614479Y2 (enrdf_load_stackoverflow) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5645893A (en) * | 1979-09-25 | 1981-04-25 | Nippon Telegr & Teleph Corp <Ntt> | Reducing method for defect of silicon single crystal |
| JPS58104096A (ja) * | 1981-10-23 | 1983-06-21 | Toshiba Ceramics Co Ltd | 単結晶シリコン引上装置 |
-
1986
- 1986-08-20 JP JP1986127461U patent/JPH0614479Y2/ja not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5645893A (en) * | 1979-09-25 | 1981-04-25 | Nippon Telegr & Teleph Corp <Ntt> | Reducing method for defect of silicon single crystal |
| JPS58104096A (ja) * | 1981-10-23 | 1983-06-21 | Toshiba Ceramics Co Ltd | 単結晶シリコン引上装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0614479Y2 (ja) | 1994-04-13 |