JPH031486Y2 - - Google Patents
Info
- Publication number
- JPH031486Y2 JPH031486Y2 JP14435985U JP14435985U JPH031486Y2 JP H031486 Y2 JPH031486 Y2 JP H031486Y2 JP 14435985 U JP14435985 U JP 14435985U JP 14435985 U JP14435985 U JP 14435985U JP H031486 Y2 JPH031486 Y2 JP H031486Y2
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- single crystal
- growth
- raw material
- silicon carbide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 44
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 42
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 41
- 239000002994 raw material Substances 0.000 claims description 21
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 16
- 229910002804 graphite Inorganic materials 0.000 claims description 16
- 239000010439 graphite Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 11
- 238000000859 sublimation Methods 0.000 claims description 4
- 230000008022 sublimation Effects 0.000 claims description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 230000006698 induction Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14435985U JPH031486Y2 (enrdf_load_stackoverflow) | 1985-09-20 | 1985-09-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14435985U JPH031486Y2 (enrdf_load_stackoverflow) | 1985-09-20 | 1985-09-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6255573U JPS6255573U (enrdf_load_stackoverflow) | 1987-04-06 |
| JPH031486Y2 true JPH031486Y2 (enrdf_load_stackoverflow) | 1991-01-17 |
Family
ID=31054884
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14435985U Expired JPH031486Y2 (enrdf_load_stackoverflow) | 1985-09-20 | 1985-09-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH031486Y2 (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010030828A (ja) * | 2008-07-28 | 2010-02-12 | Bridgestone Corp | 炭化ケイ素単結晶の製造方法および装置 |
-
1985
- 1985-09-20 JP JP14435985U patent/JPH031486Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6255573U (enrdf_load_stackoverflow) | 1987-04-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3165685B2 (ja) | 炭化珪素単結晶の昇華成長 | |
| US5968261A (en) | Method for growing large silicon carbide single crystals | |
| TWI361847B (en) | Method and equipment for aln-monocrystal production with gas-pervious crucible-wall | |
| JPS6357400B2 (enrdf_load_stackoverflow) | ||
| CN115821372A (zh) | 晶体生长装置 | |
| JP4052678B2 (ja) | 大形炭化珪素単結晶成長装置 | |
| JPH0455397A (ja) | α―ＳｉＣ単結晶の製造方法 | |
| JP3237069B2 (ja) | ＳｉＣ単結晶の製造方法 | |
| CN113026094A (zh) | 碳化硅单晶生长控制装置及控制方法 | |
| JPH0788274B2 (ja) | ＳｉＣ単結晶の成長方法 | |
| JPH04193799A (ja) | 炭化珪素単結晶の製造方法 | |
| JPH03295898A (ja) | 炭化珪素単結晶成長方法および装置 | |
| JPH0230699A (ja) | 炭化珪素単結晶成長方法および装置 | |
| JPH031486Y2 (enrdf_load_stackoverflow) | ||
| JP6829767B2 (ja) | ＳｉＣ結晶成長用ＳｉＣ原料の製造方法及び製造装置 | |
| JPH11209198A (ja) | ＳｉＣ単結晶の合成方法 | |
| JPH05178698A (ja) | 炭化珪素バルク単結晶の製造装置及び製造方法 | |
| JPH08245299A (ja) | 炭化ケイ素の結晶成長方法 | |
| JPH0639360B2 (ja) | ６ｈ型および４ｈ型炭化珪素単結晶の成長方法 | |
| JP4053125B2 (ja) | ＳｉＣ単結晶の合成方法 | |
| JPH06298600A (ja) | ＳｉＣ単結晶の成長方法 | |
| JPH08325099A (ja) | ＳｉＣ単結晶の成長方法 | |
| JPH06191998A (ja) | 炭化珪素単結晶の成長方法およびその成長装置 | |
| RU2324019C2 (ru) | Тигель для эпитаксии карбида кремния | |
| JPH06298514A (ja) | 高純度炭化ケイ素の製造方法 |