JPH0586659B2 - - Google Patents
Info
- Publication number
- JPH0586659B2 JPH0586659B2 JP57187387A JP18738782A JPH0586659B2 JP H0586659 B2 JPH0586659 B2 JP H0586659B2 JP 57187387 A JP57187387 A JP 57187387A JP 18738782 A JP18738782 A JP 18738782A JP H0586659 B2 JPH0586659 B2 JP H0586659B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- etching
- sio
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000463 material Substances 0.000 claims description 42
- 238000005530 etching Methods 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 28
- 238000000151 deposition Methods 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 238000002955 isolation Methods 0.000 claims description 13
- 230000003647 oxidation Effects 0.000 claims description 12
- 238000007254 oxidation reaction Methods 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 3
- 239000010408 film Substances 0.000 description 112
- 229910004298 SiO 2 Inorganic materials 0.000 description 44
- 238000001020 plasma etching Methods 0.000 description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 229920005591 polysilicon Polymers 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910017305 Mo—Si Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Local Oxidation Of Silicon (AREA)
- Drying Of Semiconductors (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18738782A JPS5978542A (ja) | 1982-10-27 | 1982-10-27 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18738782A JPS5978542A (ja) | 1982-10-27 | 1982-10-27 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5978542A JPS5978542A (ja) | 1984-05-07 |
| JPH0586659B2 true JPH0586659B2 (US20030204162A1-20031030-M00001.png) | 1993-12-13 |
Family
ID=16205124
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18738782A Granted JPS5978542A (ja) | 1982-10-27 | 1982-10-27 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5978542A (US20030204162A1-20031030-M00001.png) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2811689B2 (ja) * | 1988-07-05 | 1998-10-15 | 松下電器産業株式会社 | 半導体装置の製造方法 |
| KR100763538B1 (ko) * | 2006-08-29 | 2007-10-05 | 삼성전자주식회사 | 마스크 패턴의 형성 방법 및 이를 이용한 미세 패턴의 형성방법 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5669833A (en) * | 1979-11-09 | 1981-06-11 | Toshiba Corp | Fine processing method of thin film |
| JPS56131945A (en) * | 1980-03-19 | 1981-10-15 | Matsushita Electric Ind Co Ltd | Forming method of silicon oxidation film |
| JPS56137651A (en) * | 1980-03-17 | 1981-10-27 | Ibm | Method of forming exfoliating region |
| JPS56142667A (en) * | 1980-03-13 | 1981-11-07 | Ibm | Semiconductor device |
| JPS5864044A (ja) * | 1981-10-14 | 1983-04-16 | Toshiba Corp | 半導体装置の製造方法 |
| JPS5919349A (ja) * | 1982-07-26 | 1984-01-31 | Toshiba Corp | 半導体装置およびその製造方法 |
-
1982
- 1982-10-27 JP JP18738782A patent/JPS5978542A/ja active Granted
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5669833A (en) * | 1979-11-09 | 1981-06-11 | Toshiba Corp | Fine processing method of thin film |
| JPS56142667A (en) * | 1980-03-13 | 1981-11-07 | Ibm | Semiconductor device |
| JPS56137651A (en) * | 1980-03-17 | 1981-10-27 | Ibm | Method of forming exfoliating region |
| JPS56131945A (en) * | 1980-03-19 | 1981-10-15 | Matsushita Electric Ind Co Ltd | Forming method of silicon oxidation film |
| JPS5864044A (ja) * | 1981-10-14 | 1983-04-16 | Toshiba Corp | 半導体装置の製造方法 |
| JPS5919349A (ja) * | 1982-07-26 | 1984-01-31 | Toshiba Corp | 半導体装置およびその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5978542A (ja) | 1984-05-07 |
