JPH0584065B2 - - Google Patents

Info

Publication number
JPH0584065B2
JPH0584065B2 JP58131493A JP13149383A JPH0584065B2 JP H0584065 B2 JPH0584065 B2 JP H0584065B2 JP 58131493 A JP58131493 A JP 58131493A JP 13149383 A JP13149383 A JP 13149383A JP H0584065 B2 JPH0584065 B2 JP H0584065B2
Authority
JP
Japan
Prior art keywords
film
transistor
thin film
amorphous silicon
photoreceptor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58131493A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6022881A (ja
Inventor
Shinji Morozumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP58131493A priority Critical patent/JPS6022881A/ja
Publication of JPS6022881A publication Critical patent/JPS6022881A/ja
Publication of JPH0584065B2 publication Critical patent/JPH0584065B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Facsimile Heads (AREA)
JP58131493A 1983-07-19 1983-07-19 イメージセンサの製造方法 Granted JPS6022881A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58131493A JPS6022881A (ja) 1983-07-19 1983-07-19 イメージセンサの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58131493A JPS6022881A (ja) 1983-07-19 1983-07-19 イメージセンサの製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2188701A Division JPH0372770A (ja) 1990-07-17 1990-07-17 読み取り装置

Publications (2)

Publication Number Publication Date
JPS6022881A JPS6022881A (ja) 1985-02-05
JPH0584065B2 true JPH0584065B2 (enrdf_load_stackoverflow) 1993-11-30

Family

ID=15059282

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58131493A Granted JPS6022881A (ja) 1983-07-19 1983-07-19 イメージセンサの製造方法

Country Status (1)

Country Link
JP (1) JPS6022881A (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2707533B2 (ja) * 1985-04-08 1998-01-28 セイコーエプソン株式会社 固体撮像装置
JPS62124769A (ja) * 1985-11-25 1987-06-06 Matsushita Electric Ind Co Ltd 密着型イメ−ジセンサ
JPH0783096B2 (ja) * 1985-12-17 1995-09-06 セイコーエプソン株式会社 固体撮像装置
JPH0443931U (enrdf_load_stackoverflow) * 1990-08-20 1992-04-14
US6407418B1 (en) 1998-09-16 2002-06-18 Nec Corporation Semiconductor device, method of manufacturing the same, image sensor apparatus having the same and image reader having the same

Also Published As

Publication number Publication date
JPS6022881A (ja) 1985-02-05

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