JPH0582068B2 - - Google Patents

Info

Publication number
JPH0582068B2
JPH0582068B2 JP58025706A JP2570683A JPH0582068B2 JP H0582068 B2 JPH0582068 B2 JP H0582068B2 JP 58025706 A JP58025706 A JP 58025706A JP 2570683 A JP2570683 A JP 2570683A JP H0582068 B2 JPH0582068 B2 JP H0582068B2
Authority
JP
Japan
Prior art keywords
region
protection circuit
drain
oxide film
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58025706A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59151469A (ja
Inventor
Takehide Shirato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58025706A priority Critical patent/JPS59151469A/ja
Publication of JPS59151469A publication Critical patent/JPS59151469A/ja
Publication of JPH0582068B2 publication Critical patent/JPH0582068B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP58025706A 1983-02-18 1983-02-18 保護回路素子 Granted JPS59151469A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58025706A JPS59151469A (ja) 1983-02-18 1983-02-18 保護回路素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58025706A JPS59151469A (ja) 1983-02-18 1983-02-18 保護回路素子

Publications (2)

Publication Number Publication Date
JPS59151469A JPS59151469A (ja) 1984-08-29
JPH0582068B2 true JPH0582068B2 (enrdf_load_stackoverflow) 1993-11-17

Family

ID=12173224

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58025706A Granted JPS59151469A (ja) 1983-02-18 1983-02-18 保護回路素子

Country Status (1)

Country Link
JP (1) JPS59151469A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5296450B2 (ja) * 2008-08-13 2013-09-25 セイコーインスツル株式会社 半導体装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5837969A (ja) * 1981-08-31 1983-03-05 Fujitsu Ltd 保護回路素子

Also Published As

Publication number Publication date
JPS59151469A (ja) 1984-08-29

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