JPH0580136B2 - - Google Patents
Info
- Publication number
- JPH0580136B2 JPH0580136B2 JP9077488A JP9077488A JPH0580136B2 JP H0580136 B2 JPH0580136 B2 JP H0580136B2 JP 9077488 A JP9077488 A JP 9077488A JP 9077488 A JP9077488 A JP 9077488A JP H0580136 B2 JPH0580136 B2 JP H0580136B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- reaction tube
- gas
- growth
- raw material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 43
- 239000007789 gas Substances 0.000 claims description 40
- 239000002994 raw material Substances 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 22
- 238000001947 vapour-phase growth Methods 0.000 claims description 20
- 238000005530 etching Methods 0.000 claims description 8
- 229910052733 gallium Inorganic materials 0.000 claims description 7
- 239000012808 vapor phase Substances 0.000 claims description 6
- 229910052785 arsenic Inorganic materials 0.000 claims description 5
- 239000012159 carrier gas Substances 0.000 claims description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- 229920006395 saturated elastomer Polymers 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- OEYOHULQRFXULB-UHFFFAOYSA-N arsenic trichloride Chemical compound Cl[As](Cl)Cl OEYOHULQRFXULB-UHFFFAOYSA-N 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- 230000012010 growth Effects 0.000 description 30
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 28
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 28
- 230000005587 bubbling Effects 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9077488A JPH01261819A (ja) | 1988-04-12 | 1988-04-12 | 化合物半導体の気相成長方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9077488A JPH01261819A (ja) | 1988-04-12 | 1988-04-12 | 化合物半導体の気相成長方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01261819A JPH01261819A (ja) | 1989-10-18 |
| JPH0580136B2 true JPH0580136B2 (de) | 1993-11-08 |
Family
ID=14007950
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9077488A Granted JPH01261819A (ja) | 1988-04-12 | 1988-04-12 | 化合物半導体の気相成長方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01261819A (de) |
-
1988
- 1988-04-12 JP JP9077488A patent/JPH01261819A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01261819A (ja) | 1989-10-18 |
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