JPH0577135B2 - - Google Patents
Info
- Publication number
- JPH0577135B2 JPH0577135B2 JP3579488A JP3579488A JPH0577135B2 JP H0577135 B2 JPH0577135 B2 JP H0577135B2 JP 3579488 A JP3579488 A JP 3579488A JP 3579488 A JP3579488 A JP 3579488A JP H0577135 B2 JPH0577135 B2 JP H0577135B2
- Authority
- JP
- Japan
- Prior art keywords
- current
- emitter
- chip
- tip
- electric field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005684 electric field Effects 0.000 claims description 18
- 239000007789 gas Substances 0.000 claims description 16
- 229930195733 hydrocarbon Natural products 0.000 claims description 12
- 150000002430 hydrocarbons Chemical class 0.000 claims description 12
- 229910052758 niobium Inorganic materials 0.000 claims description 12
- 239000010955 niobium Substances 0.000 claims description 12
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 11
- 239000004215 Carbon black (E152) Substances 0.000 claims description 10
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 8
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 8
- 239000005977 Ethylene Substances 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 8
- 229910001882 dioxygen Inorganic materials 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 23
- 229910002804 graphite Inorganic materials 0.000 description 21
- 239000010439 graphite Substances 0.000 description 21
- 238000010438 heat treatment Methods 0.000 description 19
- 230000005855 radiation Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002821 niobium Chemical class 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Cold Cathode And The Manufacture (AREA)
- Electron Sources, Ion Sources (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63035794A JPH01209634A (ja) | 1988-02-18 | 1988-02-18 | 炭窒化ニオブフィールドエミッターの作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63035794A JPH01209634A (ja) | 1988-02-18 | 1988-02-18 | 炭窒化ニオブフィールドエミッターの作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01209634A JPH01209634A (ja) | 1989-08-23 |
| JPH0577135B2 true JPH0577135B2 (enrdf_load_stackoverflow) | 1993-10-26 |
Family
ID=12451830
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63035794A Granted JPH01209634A (ja) | 1988-02-18 | 1988-02-18 | 炭窒化ニオブフィールドエミッターの作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01209634A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080237541A1 (en) * | 2007-03-30 | 2008-10-02 | General Electric Company | Thermo-optically functional compositions, systems and methods of making |
| US8278823B2 (en) | 2007-03-30 | 2012-10-02 | General Electric Company | Thermo-optically functional compositions, systems and methods of making |
-
1988
- 1988-02-18 JP JP63035794A patent/JPH01209634A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01209634A (ja) | 1989-08-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5861707A (en) | Field emitter with wide band gap emission areas and method of using | |
| US5258685A (en) | Field emission electron source employing a diamond coating | |
| US5199918A (en) | Method of forming field emitter device with diamond emission tips | |
| JP2873930B2 (ja) | カーボンナノチューブを有する炭素質固体構造体、炭素質固体構造体からなる電子線源素子用電子放出体、及び炭素質固体構造体の製造方法 | |
| US6359378B1 (en) | Amplifier having multilayer carbon-based field emission cathode | |
| JP2966842B1 (ja) | 電界放射型電子源 | |
| EP0528391A1 (en) | A field emission electron source employing a diamond coating and method for producing same | |
| KR20120060198A (ko) | 전자 방출체 및 x선 방사장치 | |
| US6465954B2 (en) | Cathode structure with getter material and diamond film, and methods of manufacture thereof | |
| JPS585496B2 (ja) | 安定な熱電界放出陰極を再生可能に製造する方法 | |
| US6441550B1 (en) | Carbon-based field emission electron device for high current density applications | |
| JP2987140B2 (ja) | 電界放射型電子源およびその製造方法および平面発光装置およびディスプレイ装置および固体真空デバイス | |
| US6084340A (en) | Electron emitter with nano-crystalline diamond having a Raman spectrum with three lines | |
| JPH0577135B2 (enrdf_load_stackoverflow) | ||
| Uh et al. | Improvement of electron emission efficiency and stability by surface application of molybdenum silicide onto gated poly-Si field emitters | |
| JPH0577133B2 (enrdf_load_stackoverflow) | ||
| Mackie et al. | Preparation and characterization of zirconium carbide field emitters | |
| JPH0577134B2 (enrdf_load_stackoverflow) | ||
| JP3188952B2 (ja) | カーボンナノチューブの回収方法 | |
| JP2001516128A (ja) | ゲッタ材料からなる陰極 | |
| JPH0628130B2 (ja) | 炭化ニオブフィールドエミッターの作製方法 | |
| JPH09259737A (ja) | 電子放出デバイス | |
| JPH0577132B2 (enrdf_load_stackoverflow) | ||
| JPH0533487B2 (enrdf_load_stackoverflow) | ||
| JPH03735B2 (enrdf_load_stackoverflow) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |