JPH0577132B2 - - Google Patents
Info
- Publication number
- JPH0577132B2 JPH0577132B2 JP21983385A JP21983385A JPH0577132B2 JP H0577132 B2 JPH0577132 B2 JP H0577132B2 JP 21983385 A JP21983385 A JP 21983385A JP 21983385 A JP21983385 A JP 21983385A JP H0577132 B2 JPH0577132 B2 JP H0577132B2
- Authority
- JP
- Japan
- Prior art keywords
- emitter
- chip
- tip
- electric field
- field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005684 electric field Effects 0.000 claims description 19
- 239000013078 crystal Substances 0.000 claims description 8
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 6
- 229910001882 dioxygen Inorganic materials 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 description 8
- 238000010894 electron beam technology Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 150000003623 transition metal compounds Chemical class 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Cold Cathode And The Manufacture (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60219833A JPS6280936A (ja) | 1985-10-02 | 1985-10-02 | フイ−ルドエミツタ−の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60219833A JPS6280936A (ja) | 1985-10-02 | 1985-10-02 | フイ−ルドエミツタ−の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6280936A JPS6280936A (ja) | 1987-04-14 |
| JPH0577132B2 true JPH0577132B2 (enrdf_load_stackoverflow) | 1993-10-26 |
Family
ID=16741760
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60219833A Granted JPS6280936A (ja) | 1985-10-02 | 1985-10-02 | フイ−ルドエミツタ−の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6280936A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63279535A (ja) * | 1987-05-08 | 1988-11-16 | Natl Inst For Res In Inorg Mater | 炭窒化ニオブフイ−ルドエミツタ−の製造方法 |
-
1985
- 1985-10-02 JP JP60219833A patent/JPS6280936A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6280936A (ja) | 1987-04-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3558966A (en) | Directly heated dispenser cathode | |
| US6798126B2 (en) | High angular intensity Schottky electron point source | |
| DE69401694D1 (de) | Elektroner emittierende Vorrichtung | |
| US6465954B2 (en) | Cathode structure with getter material and diamond film, and methods of manufacture thereof | |
| JPH0577132B2 (enrdf_load_stackoverflow) | ||
| JP2851727B2 (ja) | 放電灯用電極 | |
| Swanson et al. | Recent progress in thermal field electron source performance | |
| JPH0311054B2 (enrdf_load_stackoverflow) | ||
| JPH0421295B2 (enrdf_load_stackoverflow) | ||
| JPH0577133B2 (enrdf_load_stackoverflow) | ||
| JPH0577134B2 (enrdf_load_stackoverflow) | ||
| Mousa | Characteristics of tungsten substrate with Al2O3 coatings under UHV conditions | |
| JPH03735B2 (enrdf_load_stackoverflow) | ||
| JPS6091528A (ja) | 遷移金属化合物からなるフイ−ルド・エミツタ− | |
| JPH0577135B2 (enrdf_load_stackoverflow) | ||
| JPS63279535A (ja) | 炭窒化ニオブフイ−ルドエミツタ−の製造方法 | |
| Ito et al. | Effects of thermal annealing on emission characteristics and emitter surface properties of a Spindt-type field emission cathode | |
| JPH0227643A (ja) | 熱電界放射電子銃の安定化方法 | |
| Vanselow | Field electron emission from an aluminum oxide covered tungsten {112} plane at temperatures up to 1700° K | |
| JPS5659422A (en) | Field emissive cathode | |
| JPH05205696A (ja) | 放電ランプ用電極及びその製法 | |
| JP3079097B1 (ja) | 電界放射型電子源およびその製造方法 | |
| JPH0434253B2 (enrdf_load_stackoverflow) | ||
| JP3508651B2 (ja) | 電界放射型電子源およびその製造方法 | |
| JP2000215785A (ja) | 含浸型陰極基体、その製造方法および陰極構体 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |