JPH0577133B2 - - Google Patents
Info
- Publication number
- JPH0577133B2 JPH0577133B2 JP21983485A JP21983485A JPH0577133B2 JP H0577133 B2 JPH0577133 B2 JP H0577133B2 JP 21983485 A JP21983485 A JP 21983485A JP 21983485 A JP21983485 A JP 21983485A JP H0577133 B2 JPH0577133 B2 JP H0577133B2
- Authority
- JP
- Japan
- Prior art keywords
- emitter
- chip
- carbon film
- tip
- electric field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052799 carbon Inorganic materials 0.000 claims description 25
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 24
- 230000005684 electric field Effects 0.000 claims description 19
- 239000004215 Carbon black (E152) Substances 0.000 claims description 7
- 229930195733 hydrocarbon Natural products 0.000 claims description 7
- 150000002430 hydrocarbons Chemical class 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 7
- 238000010894 electron beam technology Methods 0.000 description 5
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 3
- 239000005977 Ethylene Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 150000001721 carbon Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 2
- 125000003821 2-(trimethylsilyl)ethoxymethyl group Chemical group [H]C([H])([H])[Si](C([H])([H])[H])(C([H])([H])[H])C([H])([H])C(OC([H])([H])[*])([H])[H] 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
Landscapes
- Cold Cathode And The Manufacture (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60219834A JPS6280937A (ja) | 1985-10-02 | 1985-10-02 | 高性能フイ−ルドエミツタ−の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60219834A JPS6280937A (ja) | 1985-10-02 | 1985-10-02 | 高性能フイ−ルドエミツタ−の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6280937A JPS6280937A (ja) | 1987-04-14 |
JPH0577133B2 true JPH0577133B2 (enrdf_load_stackoverflow) | 1993-10-26 |
Family
ID=16741777
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60219834A Granted JPS6280937A (ja) | 1985-10-02 | 1985-10-02 | 高性能フイ−ルドエミツタ−の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6280937A (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63279535A (ja) * | 1987-05-08 | 1988-11-16 | Natl Inst For Res In Inorg Mater | 炭窒化ニオブフイ−ルドエミツタ−の製造方法 |
-
1985
- 1985-10-02 JP JP60219834A patent/JPS6280937A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6280937A (ja) | 1987-04-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5258685A (en) | Field emission electron source employing a diamond coating | |
US5199918A (en) | Method of forming field emitter device with diamond emission tips | |
US20090115306A1 (en) | Field emission electron source having carbon nanotubes and method for manufacturing the same | |
KR100245910B1 (ko) | 유사 다이아몬드박막의 제조방법,이에 따른 유사 다이아몬드박막,전계방출어레이 및 전계에미터캐소드 | |
Mackie et al. | Field emission from hafnium carbide | |
JPS585496B2 (ja) | 安定な熱電界放出陰極を再生可能に製造する方法 | |
JP2002523860A (ja) | ゲッター材料及びダイヤモンド膜を有する陰極構造体及びその製造方法 | |
JP2001357771A (ja) | 電子放出素子およびその製造方法および面発光装置および画像表示装置および固体真空デバイス | |
JP3299544B2 (ja) | 電界放出カソード及びその製造方法 | |
JPH0577133B2 (enrdf_load_stackoverflow) | ||
US6447851B1 (en) | Field emission from bias-grown diamond thin films in a microwave plasma | |
JPH0311054B2 (enrdf_load_stackoverflow) | ||
JPH11273551A (ja) | 窒化ホウ素を用いた電子放出素子及びその製造方法 | |
JPH0577135B2 (enrdf_load_stackoverflow) | ||
JPH0577134B2 (enrdf_load_stackoverflow) | ||
JPH0434253B2 (enrdf_load_stackoverflow) | ||
JPH0577132B2 (enrdf_load_stackoverflow) | ||
JP6961831B2 (ja) | 電子源の製造方法 | |
JPH03735B2 (enrdf_load_stackoverflow) | ||
JPH0533487B2 (enrdf_load_stackoverflow) | ||
JPH0628130B2 (ja) | 炭化ニオブフィールドエミッターの作製方法 | |
JPH0421295B2 (enrdf_load_stackoverflow) | ||
JPS63279535A (ja) | 炭窒化ニオブフイ−ルドエミツタ−の製造方法 | |
JP4867643B2 (ja) | ショットキーエミッタの製造方法 | |
SU439028A1 (ru) | Способ изготовлени автоэлектронных катодов |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |