JPH0573273B2 - - Google Patents

Info

Publication number
JPH0573273B2
JPH0573273B2 JP61233615A JP23361586A JPH0573273B2 JP H0573273 B2 JPH0573273 B2 JP H0573273B2 JP 61233615 A JP61233615 A JP 61233615A JP 23361586 A JP23361586 A JP 23361586A JP H0573273 B2 JPH0573273 B2 JP H0573273B2
Authority
JP
Japan
Prior art keywords
gallium arsenide
insulating film
mask
electrodes
arsenide substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61233615A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6387761A (ja
Inventor
Juji Hara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP23361586A priority Critical patent/JPS6387761A/ja
Publication of JPS6387761A publication Critical patent/JPS6387761A/ja
Publication of JPH0573273B2 publication Critical patent/JPH0573273B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP23361586A 1986-09-30 1986-09-30 ガリウム砒素集積回路のｍｉｍ容量 Granted JPS6387761A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23361586A JPS6387761A (ja) 1986-09-30 1986-09-30 ガリウム砒素集積回路のｍｉｍ容量

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23361586A JPS6387761A (ja) 1986-09-30 1986-09-30 ガリウム砒素集積回路のｍｉｍ容量

Publications (2)

Publication Number Publication Date
JPS6387761A JPS6387761A (ja) 1988-04-19
JPH0573273B2 true JPH0573273B2 (US06521211-20030218-C00004.png) 1993-10-14

Family

ID=16957820

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23361586A Granted JPS6387761A (ja) 1986-09-30 1986-09-30 ガリウム砒素集積回路のｍｉｍ容量

Country Status (1)

Country Link
JP (1) JPS6387761A (US06521211-20030218-C00004.png)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6251740B1 (en) 1998-12-23 2001-06-26 Lsi Logic Corporation Method of forming and electrically connecting a vertical interdigitated metal-insulator-metal capacitor extending between interconnect layers in an integrated circuit
US6441419B1 (en) 1998-03-31 2002-08-27 Lsi Logic Corporation Encapsulated-metal vertical-interdigitated capacitor and damascene method of manufacturing same
US6417535B1 (en) * 1998-12-23 2002-07-09 Lsi Logic Corporation Vertical interdigitated metal-insulator-metal capacitor for an integrated circuit
US6504202B1 (en) 2000-02-02 2003-01-07 Lsi Logic Corporation Interconnect-embedded metal-insulator-metal capacitor
US6342734B1 (en) 2000-04-27 2002-01-29 Lsi Logic Corporation Interconnect-integrated metal-insulator-metal capacitor and method of fabricating same
US6341056B1 (en) 2000-05-17 2002-01-22 Lsi Logic Corporation Capacitor with multiple-component dielectric and method of fabricating same
US6566186B1 (en) 2000-05-17 2003-05-20 Lsi Logic Corporation Capacitor with stoichiometrically adjusted dielectric and method of fabricating same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6066851A (ja) * 1983-09-22 1985-04-17 Oki Electric Ind Co Ltd 集積回路用コンデンサ及びその製造方法
JPS60178659A (ja) * 1984-02-24 1985-09-12 Toshiba Corp 半導体装置およびその製造方法
JPS6136965A (ja) * 1984-07-30 1986-02-21 Toshiba Corp 半導体メモリ装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6066851A (ja) * 1983-09-22 1985-04-17 Oki Electric Ind Co Ltd 集積回路用コンデンサ及びその製造方法
JPS60178659A (ja) * 1984-02-24 1985-09-12 Toshiba Corp 半導体装置およびその製造方法
JPS6136965A (ja) * 1984-07-30 1986-02-21 Toshiba Corp 半導体メモリ装置

Also Published As

Publication number Publication date
JPS6387761A (ja) 1988-04-19

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