JPH0571189B2 - - Google Patents

Info

Publication number
JPH0571189B2
JPH0571189B2 JP62089711A JP8971187A JPH0571189B2 JP H0571189 B2 JPH0571189 B2 JP H0571189B2 JP 62089711 A JP62089711 A JP 62089711A JP 8971187 A JP8971187 A JP 8971187A JP H0571189 B2 JPH0571189 B2 JP H0571189B2
Authority
JP
Japan
Prior art keywords
gate electrode
electrode layer
layer
polycrystalline silicon
concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62089711A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63255964A (ja
Inventor
Tomohisa Mizuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP62089711A priority Critical patent/JPS63255964A/ja
Publication of JPS63255964A publication Critical patent/JPS63255964A/ja
Publication of JPH0571189B2 publication Critical patent/JPH0571189B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H10D64/662—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures
    • H10D64/664—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures the additional layers comprising a barrier layer between the layer of silicon and an upper metal or metal silicide layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H10D64/662—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures
JP62089711A 1987-04-14 1987-04-14 半導体装置 Granted JPS63255964A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62089711A JPS63255964A (ja) 1987-04-14 1987-04-14 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62089711A JPS63255964A (ja) 1987-04-14 1987-04-14 半導体装置

Publications (2)

Publication Number Publication Date
JPS63255964A JPS63255964A (ja) 1988-10-24
JPH0571189B2 true JPH0571189B2 (enExample) 1993-10-06

Family

ID=13978354

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62089711A Granted JPS63255964A (ja) 1987-04-14 1987-04-14 半導体装置

Country Status (1)

Country Link
JP (1) JPS63255964A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU638812B2 (en) * 1990-04-16 1993-07-08 Digital Equipment Corporation A method of operating a semiconductor device
JP2558931B2 (ja) * 1990-07-13 1996-11-27 株式会社東芝 半導体装置およびその製造方法
JP3548984B2 (ja) * 1991-11-14 2004-08-04 富士通株式会社 半導体装置の製造方法
JPH11307765A (ja) 1998-04-20 1999-11-05 Nec Corp 半導体装置及びその製造方法

Also Published As

Publication number Publication date
JPS63255964A (ja) 1988-10-24

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