JPS63255964A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS63255964A
JPS63255964A JP62089711A JP8971187A JPS63255964A JP S63255964 A JPS63255964 A JP S63255964A JP 62089711 A JP62089711 A JP 62089711A JP 8971187 A JP8971187 A JP 8971187A JP S63255964 A JPS63255964 A JP S63255964A
Authority
JP
Japan
Prior art keywords
gate electrode
polycrystalline silicon
electrode layer
layer
threshold value
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62089711A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0571189B2 (enExample
Inventor
Tomohisa Mizuno
智久 水野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62089711A priority Critical patent/JPS63255964A/ja
Publication of JPS63255964A publication Critical patent/JPS63255964A/ja
Publication of JPH0571189B2 publication Critical patent/JPH0571189B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H10D64/662—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures
    • H10D64/664—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures the additional layers comprising a barrier layer between the layer of silicon and an upper metal or metal silicide layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H10D64/662—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures
JP62089711A 1987-04-14 1987-04-14 半導体装置 Granted JPS63255964A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62089711A JPS63255964A (ja) 1987-04-14 1987-04-14 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62089711A JPS63255964A (ja) 1987-04-14 1987-04-14 半導体装置

Publications (2)

Publication Number Publication Date
JPS63255964A true JPS63255964A (ja) 1988-10-24
JPH0571189B2 JPH0571189B2 (enExample) 1993-10-06

Family

ID=13978354

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62089711A Granted JPS63255964A (ja) 1987-04-14 1987-04-14 半導体装置

Country Status (1)

Country Link
JP (1) JPS63255964A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0472763A (ja) * 1990-07-13 1992-03-06 Toshiba Corp 半導体装置およびその製造方法
JPH0818045A (ja) * 1990-04-16 1996-01-19 Digital Equip Corp <Dec> 時間依存性絶縁破損を減少させた半導体デバイス
US5497018A (en) * 1991-11-14 1996-03-05 Fujitsu Limited Semiconductor memory device having a floating gate with improved insulation film quality
US6297529B1 (en) 1998-04-20 2001-10-02 Nec Corporation Semiconductor device with multilayered gate structure

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0818045A (ja) * 1990-04-16 1996-01-19 Digital Equip Corp <Dec> 時間依存性絶縁破損を減少させた半導体デバイス
JPH0472763A (ja) * 1990-07-13 1992-03-06 Toshiba Corp 半導体装置およびその製造方法
US5256894A (en) * 1990-07-13 1993-10-26 Kabushiki Kaisha Toshiba Semiconductor device having variable impurity concentration polysilicon layer
US5497018A (en) * 1991-11-14 1996-03-05 Fujitsu Limited Semiconductor memory device having a floating gate with improved insulation film quality
US6297529B1 (en) 1998-04-20 2001-10-02 Nec Corporation Semiconductor device with multilayered gate structure
KR100326953B1 (ko) * 1998-04-20 2002-03-13 가네꼬 히사시 반도체장치 및 그 제조방법

Also Published As

Publication number Publication date
JPH0571189B2 (enExample) 1993-10-06

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