JPH0570946B2 - - Google Patents
Info
- Publication number
- JPH0570946B2 JPH0570946B2 JP59263797A JP26379784A JPH0570946B2 JP H0570946 B2 JPH0570946 B2 JP H0570946B2 JP 59263797 A JP59263797 A JP 59263797A JP 26379784 A JP26379784 A JP 26379784A JP H0570946 B2 JPH0570946 B2 JP H0570946B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- region
- substrate
- conductivity type
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
Landscapes
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59263797A JPS61141177A (ja) | 1984-12-14 | 1984-12-14 | 半導体光検出装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59263797A JPS61141177A (ja) | 1984-12-14 | 1984-12-14 | 半導体光検出装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61141177A JPS61141177A (ja) | 1986-06-28 |
JPH0570946B2 true JPH0570946B2 (enrdf_load_stackoverflow) | 1993-10-06 |
Family
ID=17394384
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59263797A Granted JPS61141177A (ja) | 1984-12-14 | 1984-12-14 | 半導体光検出装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61141177A (enrdf_load_stackoverflow) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0682817B2 (ja) * | 1985-12-20 | 1994-10-19 | 松下電器産業株式会社 | イメ−ジセンサ |
JPH061827B2 (ja) * | 1987-02-06 | 1994-01-05 | 日本電気株式会社 | 固体撮像装置 |
JPS63274171A (ja) * | 1987-05-06 | 1988-11-11 | Seiko Instr & Electronics Ltd | イメ−ジセンサ−チツプ |
JPH01107579A (ja) * | 1987-10-20 | 1989-04-25 | Fuji Electric Co Ltd | 光検知素子 |
JP4482253B2 (ja) * | 2001-09-12 | 2010-06-16 | 浜松ホトニクス株式会社 | ホトダイオードアレイ、固体撮像装置、及び、放射線検出器 |
JP4391079B2 (ja) * | 2002-11-28 | 2009-12-24 | 浜松ホトニクス株式会社 | 固体撮像装置及び放射線撮像装置 |
JP6552850B2 (ja) * | 2015-03-16 | 2019-07-31 | 株式会社東芝 | 光検出装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5661177A (en) * | 1979-10-23 | 1981-05-26 | Mitsubishi Electric Corp | Preparation of semiconductor photodetector |
JPS5833373A (ja) * | 1981-08-21 | 1983-02-26 | Mitsubishi Electric Corp | 半導体撮像装置 |
JPS608672B2 (ja) * | 1982-02-15 | 1985-03-05 | 株式会社日立製作所 | 固体撮像装置 |
JPS59188966A (ja) * | 1983-04-12 | 1984-10-26 | Matsushita Electronics Corp | 固体撮像装置の製造方法 |
-
1984
- 1984-12-14 JP JP59263797A patent/JPS61141177A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS61141177A (ja) | 1986-06-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN111937151B (zh) | 光检测器 | |
US9236519B2 (en) | Geiger-mode avalanche photodiode with high signal-to-noise ratio, and corresponding manufacturing process | |
KR101779212B1 (ko) | 반도체 광검출 소자 | |
US8368787B2 (en) | Image sensor, single-plate color image sensor, and electronic device | |
KR20010034780A (ko) | 트리플-웰 구조를 이용하는 액티브픽셀 셀 이미징어레이에서의 컬러 분리 | |
US5070380A (en) | Transfer gate for photodiode to CCD image sensor | |
KR890004476B1 (ko) | 반도체 광검출기 장치 | |
US5043783A (en) | Solid state image sensor | |
US8946617B2 (en) | Photodiode having a p-n junction with varying expansion of the space charge zone due to application of a variable voltage | |
JPS61139061A (ja) | 半導体光検出装置 | |
JPH0570946B2 (enrdf_load_stackoverflow) | ||
JPS61133659A (ja) | 半導体受光素子の製造方法 | |
JPS61141175A (ja) | 半導体光検出装置 | |
JPH0570945B2 (enrdf_load_stackoverflow) | ||
US20100165165A1 (en) | Method and device for a cmos image sensor | |
EP0038697A1 (en) | Semiconductor image sensor | |
JPS61183958A (ja) | 固体光検出装置 | |
JPH07105522B2 (ja) | 半導体装置 | |
JP4639502B2 (ja) | 半導体装置の製造方法および固体撮像装置の選別方法 | |
US8513753B1 (en) | Photodiode having a buried well region | |
JP2641416B2 (ja) | 光電変換装置 | |
JPS61285760A (ja) | 光電変換装置 | |
JPH069236B2 (ja) | 固体撮像装置及びその製造方法 | |
JPS5925164B2 (ja) | 半導体光検出装置 | |
JPS61234072A (ja) | 固体撮像素子 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |