JPH0570945B2 - - Google Patents

Info

Publication number
JPH0570945B2
JPH0570945B2 JP59263796A JP26379684A JPH0570945B2 JP H0570945 B2 JPH0570945 B2 JP H0570945B2 JP 59263796 A JP59263796 A JP 59263796A JP 26379684 A JP26379684 A JP 26379684A JP H0570945 B2 JPH0570945 B2 JP H0570945B2
Authority
JP
Japan
Prior art keywords
semiconductor
substrate
region
conductivity type
semiconductor region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP59263796A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61141176A (ja
Inventor
Akinaga Yamamoto
Sadaji Takimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Priority to JP59263796A priority Critical patent/JPS61141176A/ja
Publication of JPS61141176A publication Critical patent/JPS61141176A/ja
Publication of JPH0570945B2 publication Critical patent/JPH0570945B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials

Landscapes

  • Length Measuring Devices By Optical Means (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
JP59263796A 1984-12-14 1984-12-14 半導体光検出装置 Granted JPS61141176A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59263796A JPS61141176A (ja) 1984-12-14 1984-12-14 半導体光検出装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59263796A JPS61141176A (ja) 1984-12-14 1984-12-14 半導体光検出装置

Publications (2)

Publication Number Publication Date
JPS61141176A JPS61141176A (ja) 1986-06-28
JPH0570945B2 true JPH0570945B2 (enrdf_load_stackoverflow) 1993-10-06

Family

ID=17394370

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59263796A Granted JPS61141176A (ja) 1984-12-14 1984-12-14 半導体光検出装置

Country Status (1)

Country Link
JP (1) JPS61141176A (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0810125B2 (ja) * 1986-07-09 1996-01-31 日産自動車株式会社 半導体光位置検出器
JP2705326B2 (ja) * 1991-02-19 1998-01-28 日本電気株式会社 光磁気ヘッド装置
US6133615A (en) * 1998-04-13 2000-10-17 Wisconsin Alumni Research Foundation Photodiode arrays having minimized cross-talk between diodes
JP4482253B2 (ja) * 2001-09-12 2010-06-16 浜松ホトニクス株式会社 ホトダイオードアレイ、固体撮像装置、及び、放射線検出器
CN107346794B (zh) * 2016-05-04 2019-03-19 北大方正集团有限公司 Pin光电二极管的制作方法
CN116154022B (zh) * 2023-03-14 2024-03-22 江南大学 一种双层SiO2隔离的光电二极管结构、阵列及制造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5833373A (ja) * 1981-08-21 1983-02-26 Mitsubishi Electric Corp 半導体撮像装置
JPS608672B2 (ja) * 1982-02-15 1985-03-05 株式会社日立製作所 固体撮像装置
JPS59188966A (ja) * 1983-04-12 1984-10-26 Matsushita Electronics Corp 固体撮像装置の製造方法

Also Published As

Publication number Publication date
JPS61141176A (ja) 1986-06-28

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees