JPH0566744B2 - - Google Patents
Info
- Publication number
- JPH0566744B2 JPH0566744B2 JP60095261A JP9526185A JPH0566744B2 JP H0566744 B2 JPH0566744 B2 JP H0566744B2 JP 60095261 A JP60095261 A JP 60095261A JP 9526185 A JP9526185 A JP 9526185A JP H0566744 B2 JPH0566744 B2 JP H0566744B2
- Authority
- JP
- Japan
- Prior art keywords
- area
- ram
- wiring
- channel
- section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60095261A JPS61274339A (ja) | 1985-05-02 | 1985-05-02 | Ram搭載のゲ−ト・アレ− |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60095261A JPS61274339A (ja) | 1985-05-02 | 1985-05-02 | Ram搭載のゲ−ト・アレ− |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61274339A JPS61274339A (ja) | 1986-12-04 |
| JPH0566744B2 true JPH0566744B2 (enrdf_load_stackoverflow) | 1993-09-22 |
Family
ID=14132821
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60095261A Granted JPS61274339A (ja) | 1985-05-02 | 1985-05-02 | Ram搭載のゲ−ト・アレ− |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61274339A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20160052098A (ko) * | 2014-11-04 | 2016-05-12 | 서울과학기술대학교 산학협력단 | 줄로리딘-이미다졸계 화합물, 이를 이용한 아연이온, 알루미늄 이온, 철 2가 이온 및 철 3가 이온 검출제, 검출 방법 및 검출장치 |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH088336B2 (ja) * | 1987-05-22 | 1996-01-29 | 三菱電機株式会社 | 半導体記憶装置 |
| JPS63293966A (ja) * | 1987-05-27 | 1988-11-30 | Hitachi Ltd | 半導体集積回路装置 |
| US5243208A (en) * | 1987-05-27 | 1993-09-07 | Hitachi, Ltd. | Semiconductor integrated circuit device having a gate array with a ram and by-pass signal lines which interconnect a logic section and I/O unit circuit of the gate array |
| JP2588539B2 (ja) * | 1987-08-10 | 1997-03-05 | 富士通株式会社 | 半導体集積回路装置 |
| US5014242A (en) * | 1987-12-10 | 1991-05-07 | Hitachi, Ltd. | Semiconductor device for a ram disposed on chip so as to minimize distances of signal paths between the logic circuits and memory circuit |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59117132A (ja) * | 1982-12-23 | 1984-07-06 | Nec Corp | マスタスライスlsi基板 |
-
1985
- 1985-05-02 JP JP60095261A patent/JPS61274339A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20160052098A (ko) * | 2014-11-04 | 2016-05-12 | 서울과학기술대학교 산학협력단 | 줄로리딘-이미다졸계 화합물, 이를 이용한 아연이온, 알루미늄 이온, 철 2가 이온 및 철 3가 이온 검출제, 검출 방법 및 검출장치 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61274339A (ja) | 1986-12-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4660174A (en) | Semiconductor memory device having divided regular circuits | |
| JP2863661B2 (ja) | 読出専用メモリ | |
| EP0184464A1 (en) | Gate array integrated circuit device and production method therefor | |
| KR940003410B1 (ko) | 망사 구조의 전원선을 가지는 반도체 메모리 장치 | |
| JP3374967B2 (ja) | 半導体集積回路 | |
| JPH0566744B2 (enrdf_load_stackoverflow) | ||
| US6288927B1 (en) | Semiconductor memory device with column gate and equalizer circuitry | |
| JP2785655B2 (ja) | 半導体装置 | |
| JP2542706B2 (ja) | ダイナミックram | |
| JP2996324B2 (ja) | 半導体集積回路装置 | |
| JP3504837B2 (ja) | 半導体集積回路装置 | |
| JP2004006479A (ja) | 半導体記憶装置 | |
| US6300651B1 (en) | Chip layout for symmetrical-critical elements | |
| JP3412064B2 (ja) | 半導体装置及び半導体メモリ装置 | |
| JPH0763066B2 (ja) | 半導体装置 | |
| US6529406B1 (en) | Semiconductor device with power supply wirings and expanded wirable regions for users | |
| JPS6197849A (ja) | ゲ−トアレイlsi装置 | |
| US5195053A (en) | Semiconductor memory device wired to accommodate increased capacity without increasing the size of the semiconductor memory device | |
| JP3105713B2 (ja) | 半導体記憶装置 | |
| JP3048963B2 (ja) | 半導体メモリ装置 | |
| JPS63199444A (ja) | 標準セル方式半導体装置 | |
| JPH04287360A (ja) | 半導体記憶装置 | |
| JP2900944B2 (ja) | 半導体メモリ | |
| JPH04196344A (ja) | 半導体集積回路装置 | |
| JP2887951B2 (ja) | 半導体記憶装置 |