JPH0558258B2 - - Google Patents
Info
- Publication number
- JPH0558258B2 JPH0558258B2 JP127384A JP127384A JPH0558258B2 JP H0558258 B2 JPH0558258 B2 JP H0558258B2 JP 127384 A JP127384 A JP 127384A JP 127384 A JP127384 A JP 127384A JP H0558258 B2 JPH0558258 B2 JP H0558258B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- oxide film
- substrate
- sio
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 claims description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 28
- 229910052710 silicon Inorganic materials 0.000 claims description 28
- 239000010703 silicon Substances 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 27
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 22
- 238000005530 etching Methods 0.000 claims description 10
- 230000003647 oxidation Effects 0.000 claims description 9
- 238000007254 oxidation reaction Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 20
- 238000002955 isolation Methods 0.000 description 9
- 229920005591 polysilicon Polymers 0.000 description 8
- 230000005684 electric field Effects 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 241000293849 Cordylanthus Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 229910001423 beryllium ion Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP127384A JPS60145638A (ja) | 1984-01-10 | 1984-01-10 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP127384A JPS60145638A (ja) | 1984-01-10 | 1984-01-10 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60145638A JPS60145638A (ja) | 1985-08-01 |
JPH0558258B2 true JPH0558258B2 (enrdf_load_stackoverflow) | 1993-08-26 |
Family
ID=11496849
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP127384A Granted JPS60145638A (ja) | 1984-01-10 | 1984-01-10 | 半導体装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60145638A (enrdf_load_stackoverflow) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5393694A (en) * | 1994-06-15 | 1995-02-28 | Micron Semiconductor, Inc. | Advanced process for recessed poly buffered locos |
US5661073A (en) * | 1995-08-11 | 1997-08-26 | Micron Technology, Inc. | Method for forming field oxide having uniform thickness |
JP2005260163A (ja) | 2004-03-15 | 2005-09-22 | Fujitsu Ltd | 容量素子及びその製造方法並びに半導体装置及びその製造方法 |
-
1984
- 1984-01-10 JP JP127384A patent/JPS60145638A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS60145638A (ja) | 1985-08-01 |
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