JPS60145638A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS60145638A
JPS60145638A JP127384A JP127384A JPS60145638A JP S60145638 A JPS60145638 A JP S60145638A JP 127384 A JP127384 A JP 127384A JP 127384 A JP127384 A JP 127384A JP S60145638 A JPS60145638 A JP S60145638A
Authority
JP
Japan
Prior art keywords
silicon
film
substrate
layer
sio2
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP127384A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0558258B2 (enrdf_load_stackoverflow
Inventor
Sunao Shibata
直 柴田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP127384A priority Critical patent/JPS60145638A/ja
Publication of JPS60145638A publication Critical patent/JPS60145638A/ja
Publication of JPH0558258B2 publication Critical patent/JPH0558258B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
JP127384A 1984-01-10 1984-01-10 半導体装置の製造方法 Granted JPS60145638A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP127384A JPS60145638A (ja) 1984-01-10 1984-01-10 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP127384A JPS60145638A (ja) 1984-01-10 1984-01-10 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60145638A true JPS60145638A (ja) 1985-08-01
JPH0558258B2 JPH0558258B2 (enrdf_load_stackoverflow) 1993-08-26

Family

ID=11496849

Family Applications (1)

Application Number Title Priority Date Filing Date
JP127384A Granted JPS60145638A (ja) 1984-01-10 1984-01-10 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60145638A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5393694A (en) * 1994-06-15 1995-02-28 Micron Semiconductor, Inc. Advanced process for recessed poly buffered locos
US5661073A (en) * 1995-08-11 1997-08-26 Micron Technology, Inc. Method for forming field oxide having uniform thickness
US7843034B2 (en) 2004-03-15 2010-11-30 Fujitsu Semiconductor Limited Capacitor having upper electrode not formed over device isolation region

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5393694A (en) * 1994-06-15 1995-02-28 Micron Semiconductor, Inc. Advanced process for recessed poly buffered locos
US5661073A (en) * 1995-08-11 1997-08-26 Micron Technology, Inc. Method for forming field oxide having uniform thickness
US6103595A (en) * 1995-08-11 2000-08-15 Micron Technology, Inc. Assisted local oxidation of silicon
US7843034B2 (en) 2004-03-15 2010-11-30 Fujitsu Semiconductor Limited Capacitor having upper electrode not formed over device isolation region
US8772104B2 (en) 2004-03-15 2014-07-08 Fujitsu Semiconductor Limited Capacitor and method for fabricating the same, and semiconductor device and method for fabricating the same

Also Published As

Publication number Publication date
JPH0558258B2 (enrdf_load_stackoverflow) 1993-08-26

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