JPH0558257B2 - - Google Patents

Info

Publication number
JPH0558257B2
JPH0558257B2 JP58247135A JP24713583A JPH0558257B2 JP H0558257 B2 JPH0558257 B2 JP H0558257B2 JP 58247135 A JP58247135 A JP 58247135A JP 24713583 A JP24713583 A JP 24713583A JP H0558257 B2 JPH0558257 B2 JP H0558257B2
Authority
JP
Japan
Prior art keywords
forming
boron
semiconductor substrate
gate electrode
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58247135A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60138974A (ja
Inventor
Akinori Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Corporate Research and Development Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Corporate Research and Development Ltd filed Critical Fuji Electric Corporate Research and Development Ltd
Priority to JP58247135A priority Critical patent/JPS60138974A/ja
Publication of JPS60138974A publication Critical patent/JPS60138974A/ja
Publication of JPH0558257B2 publication Critical patent/JPH0558257B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP58247135A 1983-12-27 1983-12-27 絶縁ゲ−ト型電界効果トランジスタの製造方法 Granted JPS60138974A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58247135A JPS60138974A (ja) 1983-12-27 1983-12-27 絶縁ゲ−ト型電界効果トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58247135A JPS60138974A (ja) 1983-12-27 1983-12-27 絶縁ゲ−ト型電界効果トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS60138974A JPS60138974A (ja) 1985-07-23
JPH0558257B2 true JPH0558257B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-08-26

Family

ID=17158950

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58247135A Granted JPS60138974A (ja) 1983-12-27 1983-12-27 絶縁ゲ−ト型電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS60138974A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011082247A (ja) * 2009-10-05 2011-04-21 Tokyo Ohka Kogyo Co Ltd 拡散剤組成物、不純物拡散層の形成方法、および太陽電池

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6358823A (ja) * 1986-08-29 1988-03-14 Toshiba Corp 半導体装置の製造方法
JPH07120635B2 (ja) * 1986-12-26 1995-12-20 株式会社東芝 半導体装置の製造方法
JPH06105694B2 (ja) * 1987-08-13 1994-12-21 富士電機株式会社 ボロンの固相拡散方法
JPH0644559B2 (ja) * 1987-09-04 1994-06-08 株式会社東芝 半導体集積回路の製造方法
JPH02132823A (ja) * 1987-12-30 1990-05-22 Fujitsu Ltd 浅い接合を形成する方法及びその浅い接合を有する半導体装置
US5183777A (en) * 1987-12-30 1993-02-02 Fujitsu Limited Method of forming shallow junctions
JP4375387B2 (ja) 2006-11-10 2009-12-02 トヨタ自動車株式会社 内燃機関

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1008564A (en) * 1974-04-18 1977-04-12 Robert L. Luce Method of mos circuit fabrication
JPS5642336A (en) * 1979-09-14 1981-04-20 Fujitsu Ltd Manufacturing method of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011082247A (ja) * 2009-10-05 2011-04-21 Tokyo Ohka Kogyo Co Ltd 拡散剤組成物、不純物拡散層の形成方法、および太陽電池

Also Published As

Publication number Publication date
JPS60138974A (ja) 1985-07-23

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