JPH055765B2 - - Google Patents
Info
- Publication number
- JPH055765B2 JPH055765B2 JP1314472A JP31447289A JPH055765B2 JP H055765 B2 JPH055765 B2 JP H055765B2 JP 1314472 A JP1314472 A JP 1314472A JP 31447289 A JP31447289 A JP 31447289A JP H055765 B2 JPH055765 B2 JP H055765B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- hcl
- gas
- trichloromonosilane
- silicon powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 24
- 239000011863 silicon-based powder Substances 0.000 claims description 14
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 4
- 238000009689 gas atomisation Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 14
- 239000000047 product Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000005046 Chlorosilane Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical class Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
- C01B33/10742—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material
- C01B33/10757—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material with the preferential formation of trichlorosilane
- C01B33/10763—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material with the preferential formation of trichlorosilane from silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NO885454 | 1988-12-08 | ||
| NO885454A NO166032C (no) | 1988-12-08 | 1988-12-08 | Fremgangsmaate ved fremstilling av triklormonosilan. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02208217A JPH02208217A (ja) | 1990-08-17 |
| JPH055765B2 true JPH055765B2 (US06272168-20010807-M00014.png) | 1993-01-25 |
Family
ID=19891500
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1314472A Granted JPH02208217A (ja) | 1988-12-08 | 1989-12-05 | トリクロルモノシランの製造方法 |
Country Status (9)
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5871705A (en) * | 1996-09-19 | 1999-02-16 | Tokuyama Corporation | Process for producing trichlorosilane |
| DE102004017453A1 (de) * | 2004-04-08 | 2005-10-27 | Wacker-Chemie Gmbh | Verfahren zur Herstellung von Trichlormonosilan |
| WO2006094714A1 (de) * | 2005-03-05 | 2006-09-14 | Joint Solar Silicon Gmbh & Co. Kg | Reaktor und verfahren zur herstellung von silizium |
| JP4664892B2 (ja) * | 2006-12-05 | 2011-04-06 | 株式会社大阪チタニウムテクノロジーズ | シリコン塩化物の製造方法 |
| JP4620694B2 (ja) * | 2007-01-31 | 2011-01-26 | 株式会社大阪チタニウムテクノロジーズ | 高純度トリクロロシランの製造方法 |
| JP5337749B2 (ja) | 2010-03-10 | 2013-11-06 | 信越化学工業株式会社 | トリクロロシランの製造方法 |
| JP5909153B2 (ja) | 2012-06-14 | 2016-04-26 | 信越化学工業株式会社 | 高純度多結晶シリコンの製造方法 |
| JP5879283B2 (ja) | 2013-02-13 | 2016-03-08 | 信越化学工業株式会社 | トリクロロシランの製造方法 |
| JP5886234B2 (ja) | 2013-04-11 | 2016-03-16 | 信越化学工業株式会社 | シラン化合物またはクロロシラン化合物の精製方法、多結晶シリコンの製造方法、および、弱塩基性イオン交換樹脂の再生処理方法 |
| DE102013215011A1 (de) | 2013-07-31 | 2015-02-05 | Wacker Chemie Ag | Verfahren zur Herstellung von Trichlorsilan |
| JP6069167B2 (ja) | 2013-10-23 | 2017-02-01 | 信越化学工業株式会社 | 多結晶シリコンの製造方法 |
| JP6095613B2 (ja) | 2014-07-10 | 2017-03-15 | 信越化学工業株式会社 | クロロシランの精製方法 |
| EP3781519B1 (de) * | 2018-04-18 | 2022-09-28 | Wacker Chemie AG | Verfahren zur herstellung von chlorsilanen |
| WO2020125944A1 (de) * | 2018-12-18 | 2020-06-25 | Wacker Chemie Ag | Verfahren zur herstellung von chlorsilanen |
| WO2020125955A1 (de) * | 2018-12-18 | 2020-06-25 | Wacker Chemie Ag | Verfahren zur herstellung von chlorsilanen |
| JP7381605B2 (ja) * | 2019-04-29 | 2023-11-15 | ワッカー ケミー アクチエンゲゼルシャフト | 構造が最適化されたシリコン粒子を有するトリクロロシランの製造方法 |
| EP3976533A1 (de) * | 2019-05-29 | 2022-04-06 | Wacker Chemie AG | Verfahren zur herstellung von trichlorsilan mit strukturoptimierten silicium-partikeln |
| CN113286800A (zh) * | 2019-06-14 | 2021-08-20 | 瓦克化学股份公司 | 采用结构优化的硅颗粒的用于制备甲基氯硅烷的方法 |
| JP7278888B2 (ja) * | 2019-06-28 | 2023-05-22 | 高純度シリコン株式会社 | トリクロロシランの製造方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA652188A (en) * | 1962-11-13 | Chassaing Pierre | Production of trichlorosilane | |
| FR1239350A (fr) * | 1959-06-24 | 1960-12-16 | Pechiney | Perfectionnement à la fabrication industrielle du trichlorosilane |
| US3592391A (en) * | 1969-01-27 | 1971-07-13 | Knapsack Ag | Nozzle for atomizing molten material |
| US4347199A (en) * | 1981-03-02 | 1982-08-31 | Dow Corning Corporation | Method and apparatus for rapidly freezing molten metals and metalloids in particulate form |
| JPS5832011A (ja) * | 1981-08-17 | 1983-02-24 | Nippon Aerojiru Kk | 珪素と塩化水素からトリクロルシランと四塩化珪素を製造する方法 |
| US4419060A (en) * | 1983-03-14 | 1983-12-06 | Dow Corning Corporation | Apparatus for rapidly freezing molten metals and metalloids in particulate form |
-
1988
- 1988-12-08 NO NO885454A patent/NO166032C/no not_active IP Right Cessation
-
1989
- 1989-11-09 US US07/434,087 patent/US4986971A/en not_active Expired - Fee Related
- 1989-11-16 CA CA002003168A patent/CA2003168C/en not_active Expired - Fee Related
- 1989-11-22 FR FR898915325A patent/FR2640254B1/fr not_active Expired - Fee Related
- 1989-11-24 DE DE3938897A patent/DE3938897A1/de active Granted
- 1989-12-05 JP JP1314472A patent/JPH02208217A/ja active Granted
- 1989-12-06 DD DD89335320A patent/DD285967A5/de not_active IP Right Cessation
- 1989-12-07 RU SU894742716A patent/RU1838236C/ru active
- 1989-12-08 BR BR898906363A patent/BR8906363A/pt not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| NO166032B (no) | 1991-02-11 |
| CA2003168C (en) | 1997-07-15 |
| NO885454L (no) | 1990-06-11 |
| DE3938897A1 (de) | 1990-06-13 |
| RU1838236C (ru) | 1993-08-30 |
| CA2003168A1 (en) | 1990-06-08 |
| FR2640254B1 (fr) | 1993-08-27 |
| DD285967A5 (de) | 1991-01-10 |
| NO166032C (no) | 1991-05-22 |
| NO885454D0 (no) | 1988-12-08 |
| US4986971A (en) | 1991-01-22 |
| JPH02208217A (ja) | 1990-08-17 |
| FR2640254A1 (fr) | 1990-06-15 |
| BR8906363A (pt) | 1990-08-21 |
| DE3938897C2 (US06272168-20010807-M00014.png) | 1992-07-23 |
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