JPH0551187B2 - - Google Patents

Info

Publication number
JPH0551187B2
JPH0551187B2 JP60112694A JP11269485A JPH0551187B2 JP H0551187 B2 JPH0551187 B2 JP H0551187B2 JP 60112694 A JP60112694 A JP 60112694A JP 11269485 A JP11269485 A JP 11269485A JP H0551187 B2 JPH0551187 B2 JP H0551187B2
Authority
JP
Japan
Prior art keywords
thyristor
layer
phototransistor
resistor
type impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60112694A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61270867A (ja
Inventor
Yoshimitsu Tanaka
Kyoshi Hosoya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP60112694A priority Critical patent/JPS61270867A/ja
Publication of JPS61270867A publication Critical patent/JPS61270867A/ja
Publication of JPH0551187B2 publication Critical patent/JPH0551187B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263—Photothyristors

Landscapes

  • Thyristors (AREA)
  • Light Receiving Elements (AREA)
JP60112694A 1985-05-25 1985-05-25 半導体装置 Granted JPS61270867A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60112694A JPS61270867A (ja) 1985-05-25 1985-05-25 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60112694A JPS61270867A (ja) 1985-05-25 1985-05-25 半導体装置

Publications (2)

Publication Number Publication Date
JPS61270867A JPS61270867A (ja) 1986-12-01
JPH0551187B2 true JPH0551187B2 (enrdf_load_html_response) 1993-07-30

Family

ID=14593147

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60112694A Granted JPS61270867A (ja) 1985-05-25 1985-05-25 半導体装置

Country Status (1)

Country Link
JP (1) JPS61270867A (enrdf_load_html_response)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0193170A (ja) * 1987-10-05 1989-04-12 Toshiba Corp 光トリガ型半導体装置
JPH07122729A (ja) * 1993-10-25 1995-05-12 Nec Corp フォトサイリスタ

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5467393A (en) * 1977-11-09 1979-05-30 Hitachi Ltd High dielectric strength semiconductor element
JPS5593262A (en) * 1979-01-05 1980-07-15 Nec Corp Semiconductor device
DE2922301C2 (de) * 1979-05-31 1985-04-25 Siemens AG, 1000 Berlin und 8000 München Lichtsteuerbarer Thyristor und Verfahren zu seiner Herstellung

Also Published As

Publication number Publication date
JPS61270867A (ja) 1986-12-01

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