JPH0531825B2 - - Google Patents
Info
- Publication number
- JPH0531825B2 JPH0531825B2 JP60235757A JP23575785A JPH0531825B2 JP H0531825 B2 JPH0531825 B2 JP H0531825B2 JP 60235757 A JP60235757 A JP 60235757A JP 23575785 A JP23575785 A JP 23575785A JP H0531825 B2 JPH0531825 B2 JP H0531825B2
- Authority
- JP
- Japan
- Prior art keywords
- trench
- silicon
- deposited
- film
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000008021 deposition Effects 0.000 claims description 14
- 238000002955 isolation Methods 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- 239000007789 gas Substances 0.000 claims description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
- 238000001020 plasma etching Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 3
- -1 hydride compound Chemical class 0.000 claims description 3
- 229910052736 halogen Inorganic materials 0.000 claims description 2
- 150000002367 halogens Chemical class 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 238000000151 deposition Methods 0.000 description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 239000001257 hydrogen Substances 0.000 description 10
- 229910052739 hydrogen Inorganic materials 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 229910003902 SiCl 4 Inorganic materials 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 239000000460 chlorine Substances 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- KPZGRMZPZLOPBS-UHFFFAOYSA-N 1,3-dichloro-2,2-bis(chloromethyl)propane Chemical compound ClCC(CCl)(CCl)CCl KPZGRMZPZLOPBS-UHFFFAOYSA-N 0.000 description 2
- 241000293849 Cordylanthus Species 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000004335 scaling law Methods 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
Landscapes
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23575785A JPS6294955A (ja) | 1985-10-21 | 1985-10-21 | 素子分離方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23575785A JPS6294955A (ja) | 1985-10-21 | 1985-10-21 | 素子分離方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6294955A JPS6294955A (ja) | 1987-05-01 |
| JPH0531825B2 true JPH0531825B2 (ko) | 1993-05-13 |
Family
ID=16990781
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23575785A Granted JPS6294955A (ja) | 1985-10-21 | 1985-10-21 | 素子分離方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6294955A (ko) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20210151999A (ko) * | 2013-07-26 | 2021-12-14 | 쓰리엠 이노베이티브 프로퍼티즈 캄파니 | 나노구조체의 제조 방법 및 나노구조화 물품 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5513904A (en) * | 1978-07-17 | 1980-01-31 | Hitachi Ltd | Semiconductor device and its manufacturing method |
-
1985
- 1985-10-21 JP JP23575785A patent/JPS6294955A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5513904A (en) * | 1978-07-17 | 1980-01-31 | Hitachi Ltd | Semiconductor device and its manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6294955A (ja) | 1987-05-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5304510A (en) | Method of manufacturing a multilayered metallization structure in which the conductive layer and insulating layer are selectively deposited | |
| KR100319185B1 (ko) | 반도체 장치의 절연막 형성 방법 | |
| US5578524A (en) | Fabrication process of a semiconductor device with a wiring structure | |
| JP3278562B2 (ja) | 半導体装置の製造方法 | |
| JPH02304947A (ja) | 半導体デバイスの製造方法 | |
| US20020052119A1 (en) | In-situ flowing bpsg gap fill process using hdp | |
| JP4345875B2 (ja) | 半導体素子のコンタクトプラグ形成方法 | |
| KR20050017585A (ko) | 고밀도 플라즈마 증착법을 이용한 갭필 방법 | |
| JPH11340463A (ja) | 半導体材料を高融点金属に変換する方法及び前記方法を利用して製造されるｍｏｓ装置 | |
| CA1208805A (en) | Vertically isolated complementary transistors | |
| US6818537B2 (en) | Method of manufacturing a contact plug for a semiconductor device | |
| EP0437371B1 (en) | Method of manufacturing semiconductor device | |
| US6720233B2 (en) | Process for producing trench insulation in a substrate | |
| JPH0531825B2 (ko) | ||
| KR100524802B1 (ko) | 이중 선택적 에피택셜 성장법을 이용한 콘택플러그를 갖는반도체소자 및 그의 제조 방법 | |
| KR20040008421A (ko) | 반도체소자의 형성방법 | |
| KR100505629B1 (ko) | 트렌치 매립 방법 | |
| JP2702007B2 (ja) | 半導体装置の製造方法 | |
| CN116053298B (zh) | 一种半导体器件的制作方法 | |
| KR100440260B1 (ko) | 반도체 소자의 비트라인 형성 방법 | |
| KR100295671B1 (ko) | 반도체소자의격리방법 | |
| JPH01129439A (ja) | 半導体装置の製造方法 | |
| KR100376258B1 (ko) | 반도체 소자의 플러그 형성 방법 | |
| KR0125782B1 (ko) | 금속배선형성을 위한 평탄화방법 | |
| KR20020010816A (ko) | 반도체소자의 콘택 형성 방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |