JPH0531820B2 - - Google Patents

Info

Publication number
JPH0531820B2
JPH0531820B2 JP20934685A JP20934685A JPH0531820B2 JP H0531820 B2 JPH0531820 B2 JP H0531820B2 JP 20934685 A JP20934685 A JP 20934685A JP 20934685 A JP20934685 A JP 20934685A JP H0531820 B2 JPH0531820 B2 JP H0531820B2
Authority
JP
Japan
Prior art keywords
insulating film
layer
forming
contact hole
psg
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP20934685A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6267839A (ja
Inventor
Yoshiki Okumura
Takao Yasue
Shuichi Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP20934685A priority Critical patent/JPS6267839A/ja
Publication of JPS6267839A publication Critical patent/JPS6267839A/ja
Publication of JPH0531820B2 publication Critical patent/JPH0531820B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP20934685A 1985-09-19 1985-09-19 半導体装置の製造方法 Granted JPS6267839A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20934685A JPS6267839A (ja) 1985-09-19 1985-09-19 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20934685A JPS6267839A (ja) 1985-09-19 1985-09-19 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6267839A JPS6267839A (ja) 1987-03-27
JPH0531820B2 true JPH0531820B2 (enrdf_load_stackoverflow) 1993-05-13

Family

ID=16571430

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20934685A Granted JPS6267839A (ja) 1985-09-19 1985-09-19 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6267839A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01270334A (ja) * 1988-04-22 1989-10-27 Fujitsu Ltd 半導体装置の製造方法
US5026666A (en) * 1989-12-28 1991-06-25 At&T Bell Laboratories Method of making integrated circuits having a planarized dielectric
JPH05326718A (ja) * 1992-05-25 1993-12-10 Mitsubishi Electric Corp 半導体装置およびその製造方法

Also Published As

Publication number Publication date
JPS6267839A (ja) 1987-03-27

Similar Documents

Publication Publication Date Title
US4803173A (en) Method of fabrication of semiconductor device having a planar configuration
EP0537677B1 (en) Method of forming an SOI structure with a DRAM
US5629237A (en) Taper etching without re-entrance profile
US4663832A (en) Method for improving the planarity and passivation in a semiconductor isolation trench arrangement
JP2623812B2 (ja) 半導体装置の製造方法
US4641170A (en) Self-aligned lateral bipolar transistors
JPH01290236A (ja) 幅の広いトレンチを平坦化する方法
JPH03291921A (ja) 集積回路製作方法
GB2211348A (en) A method of forming an interconnection between conductive levels
JPH05226478A (ja) 半導体構造用のスタッドを形成する方法および半導体デバイス
US5384281A (en) Non-conformal and oxidizable etch stops for submicron features
EP0095654B1 (en) Method of manufacturing semiconductor device, including a step of patterning a conductor layer
JPH1145874A (ja) 半導体装置の製造方法
JPS5916334A (ja) ドライエツチング方法
JPH0531820B2 (enrdf_load_stackoverflow)
JPH05226655A (ja) 半導体装置の製造方法
JPH0562463B2 (enrdf_load_stackoverflow)
JPH04209534A (ja) 半導体装置の製造方法
US6100134A (en) Method of fabricating semiconductor device
JPH0478013B2 (enrdf_load_stackoverflow)
JPH0422021B2 (enrdf_load_stackoverflow)
JPH01114042A (ja) 半導体装置の製造方法
JPH0321024A (ja) 多層配線構造及びその層間膜加工方法
KR100367696B1 (ko) 반도체소자의미세콘택홀형성방법
JPS5950540A (ja) 半導体装置の製造方法