JPH05283614A - 集積回路のキャパシタ構造 - Google Patents

集積回路のキャパシタ構造

Info

Publication number
JPH05283614A
JPH05283614A JP4358954A JP35895492A JPH05283614A JP H05283614 A JPH05283614 A JP H05283614A JP 4358954 A JP4358954 A JP 4358954A JP 35895492 A JP35895492 A JP 35895492A JP H05283614 A JPH05283614 A JP H05283614A
Authority
JP
Japan
Prior art keywords
conductive layer
capacitor
capacitor structure
plate
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4358954A
Other languages
English (en)
Japanese (ja)
Inventor
Jeffrey W Scott
ウィリアム スコット ジェフリイ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Crystal Semiconductor Corp
Original Assignee
Crystal Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=25232334&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JPH05283614(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Crystal Semiconductor Corp filed Critical Crystal Semiconductor Corp
Publication of JPH05283614A publication Critical patent/JPH05283614A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Filters That Use Time-Delay Elements (AREA)
JP4358954A 1992-01-16 1992-12-25 集積回路のキャパシタ構造 Pending JPH05283614A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/821034 1992-01-16
US07/821,034 US5220483A (en) 1992-01-16 1992-01-16 Tri-level capacitor structure in switched-capacitor filter

Publications (1)

Publication Number Publication Date
JPH05283614A true JPH05283614A (ja) 1993-10-29

Family

ID=25232334

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4358954A Pending JPH05283614A (ja) 1992-01-16 1992-12-25 集積回路のキャパシタ構造

Country Status (3)

Country Link
US (1) US5220483A (https=)
JP (1) JPH05283614A (https=)
DE (1) DE4300519C2 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6104053A (en) * 1997-09-01 2000-08-15 Mitsubishi Denki Kabushiki Kaisha Semiconductor device comprising capacitor in logic circuit area and method of fabricating the same
WO2003084085A1 (fr) * 2002-03-28 2003-10-09 Kabushiki Kaisha Toyota Jidoshokki Appareil recepteur
US7030443B2 (en) 2002-08-30 2006-04-18 Matsushita Electric Industrial Co., Ltd. MIM capacitor

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SG48955A1 (en) * 1992-07-27 1998-05-18 Murata Manufacturing Co Multilayer electronic component method of manufacturing the same and method of measuring characteristics thereof
US5635669A (en) * 1992-07-27 1997-06-03 Murata Manufacturing Co., Ltd. Multilayer electronic component
US5926360A (en) * 1996-12-11 1999-07-20 International Business Machines Corporation Metallized oxide structure and fabrication
US5837556A (en) * 1997-01-06 1998-11-17 Sundstrand Corporation Method of removing a component from a substrate
US7336468B2 (en) 1997-04-08 2008-02-26 X2Y Attenuators, Llc Arrangement for energy conditioning
US7321485B2 (en) 1997-04-08 2008-01-22 X2Y Attenuators, Llc Arrangement for energy conditioning
US9054094B2 (en) 1997-04-08 2015-06-09 X2Y Attenuators, Llc Energy conditioning circuit arrangement for integrated circuit
US6198153B1 (en) * 1997-04-21 2001-03-06 Lsi Logic Corporation Capacitors with silicized polysilicon shielding in digital CMOS process
US6016114A (en) * 1997-04-21 2000-01-18 Lsi Logic Corporation Apparatus and method of fabricating mixed signal interface in GSM wireless application
US6198123B1 (en) 1997-08-29 2001-03-06 Cardiac Pacemakers, Inc. Shielded integrated circuit capacitor connected to a lateral transistor
US6542352B1 (en) * 1997-12-09 2003-04-01 Daniel Devoe Ceramic chip capacitor of conventional volume and external form having increased capacitance from use of closely spaced interior conductive planes reliably connecting to positionally tolerant exterior pads through multiple redundant vias
US6366443B1 (en) * 1997-12-09 2002-04-02 Daniel Devoe Ceramic chip capacitor of conventional volume and external form having increased capacitance from use of closely-spaced interior conductive planes reliably connecting to positionally-tolerant exterior pads through multiple redundant vias
US6066537A (en) * 1998-02-02 2000-05-23 Tritech Microelectronics, Ltd. Method for fabricating a shielded multilevel integrated circuit capacitor
US6288661B1 (en) 1999-10-15 2001-09-11 Cygnal Integrated Products, Inc. A/D converter with voltage/charge scaling
US6400300B1 (en) 2000-05-31 2002-06-04 Cygnal Integrated Products, Inc. D/A converter street effect compensation
US6433717B1 (en) 2000-05-31 2002-08-13 Cygnal Integrated Products, Inc. D/A resistor strings with cross coupling switches
US6448916B1 (en) 2000-05-31 2002-09-10 Cygnal Integrated Products, Inc. Dual sub-DAC resistor strings with analog interpolation
US6384763B1 (en) 2000-05-31 2002-05-07 Cygnal Integrated Products, Inc. Segemented D/A converter with enhanced dynamic range
US6448917B1 (en) 2000-05-31 2002-09-10 Cygnal Integrated Products, Inc. DAC using current source driving main resistor string
US6452778B1 (en) 2000-06-19 2002-09-17 Cygnal Integrated Products, Inc. Parasitic insensitive capacitor in d/a converter
US6456220B1 (en) 2000-06-19 2002-09-24 Cygnal Integrated Products, Inc. Analog-to-digital converter for processing differential and single-ended inputs
GB2367428B (en) * 2001-12-19 2002-10-09 Zarlink Semiconductor Ltd Integrated circuit
US6737698B1 (en) * 2002-03-11 2004-05-18 Silicon Laboratories, Inc. Shielded capacitor structure
US6661639B1 (en) 2002-07-02 2003-12-09 Presidio Components, Inc. Single layer capacitor
US6774459B2 (en) * 2002-08-13 2004-08-10 Micron Technology, Inc. Capacitor layout technique for reduction of fixed pattern noise in a CMOS sensor
US6917509B1 (en) 2002-11-21 2005-07-12 Daniel F. Devoe Single layer capacitor with dissimilar metallizations
US6940707B2 (en) * 2003-07-03 2005-09-06 Matsushita Electric Industrial Co., Ltd. Differential capacitor, differential antenna element, and differential resonator
US7048153B2 (en) * 2003-09-25 2006-05-23 Unilever Home & Personal Care Usa, Division Of Conopco, Inc. Foam dispensing article
US6885539B1 (en) 2003-12-02 2005-04-26 Presidio Components, Inc. Single layer capacitor
US7259956B2 (en) * 2003-12-19 2007-08-21 Broadcom Corporation Scalable integrated circuit high density capacitors
US6903918B1 (en) 2004-04-20 2005-06-07 Texas Instruments Incorporated Shielded planar capacitor
DE102004038528A1 (de) * 2004-08-07 2006-03-16 Atmel Germany Gmbh Halbleiterstruktur
JP2008537843A (ja) 2005-03-01 2008-09-25 エックストゥーワイ アテニュエイターズ，エルエルシー 内部で重なり合った調整器
TWI258865B (en) * 2005-03-29 2006-07-21 Realtek Semiconductor Corp Longitudinal plate capacitor structure
JP4744924B2 (ja) * 2005-05-10 2011-08-10 株式会社東芝 Ｌｓｉ内部信号観測回路
US8169014B2 (en) * 2006-01-09 2012-05-01 Taiwan Semiconductor Manufacturing Co., Ltd. Interdigitated capacitive structure for an integrated circuit
US20080149145A1 (en) * 2006-12-22 2008-06-26 Visichem Technology, Ltd Method and apparatus for optical surface cleaning by liquid cleaner as foam
US8993501B2 (en) 2011-08-01 2015-03-31 Visichem Technology, Ltd. Sprayable gel cleaner for optical and electronic surfaces
JP2014120615A (ja) 2012-12-17 2014-06-30 Fujitsu Semiconductor Ltd 容量素子、容量アレイおよびａ／ｄ変換器
US9054069B2 (en) * 2013-09-05 2015-06-09 International Business Machines Corporation Variable capacitance integrated circuit

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5890755A (ja) * 1981-11-25 1983-05-30 Nec Corp 半導体装置
JPS6116561A (ja) * 1984-07-03 1986-01-24 Nec Corp 半導体装置とその使用方法
JPS6382117A (ja) * 1986-09-26 1988-04-12 Nec Corp スイツチトキヤパシタ型フイルタ回路
JPH0244353B2 (ja) * 1983-09-14 1990-10-03 Mitsubishi Heavy Ind Ltd Sekinetsukookusukanshikishokasetsubinokanenseigasunoshorihoho

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4949154A (en) * 1983-02-23 1990-08-14 Texas Instruments, Incorporated Thin dielectrics over polysilicon
JPS60211866A (ja) * 1984-04-05 1985-10-24 Mitsubishi Electric Corp 半導体集積回路
IT1186340B (it) * 1985-10-29 1987-11-26 Sgs Microelettronica Spa Integratore differenziale a condensatore commutato utilizzante un unico condensatore di integrazione
US4849662A (en) * 1986-04-14 1989-07-18 Crystal Semiconductor Corporation Switched-capacitor filter having digitally-programmable capacitive element
US4731696A (en) * 1987-05-26 1988-03-15 National Semiconductor Corporation Three plate integrated circuit capacitor
KR920000077B1 (ko) * 1987-07-28 1992-01-06 가부시키가이샤 도시바 반도체장치의 제조방법
NL8703152A (nl) * 1987-12-29 1989-07-17 Philips Nv Geschakeld kapaciteitsnetwerk.
US5032892A (en) * 1988-05-31 1991-07-16 Micron Technology, Inc. Depletion mode chip decoupling capacitor
US5116776A (en) * 1989-11-30 1992-05-26 Sgs-Thomson Microelectronics, Inc. Method of making a stacked copacitor for dram cell
US5036020A (en) * 1990-08-31 1991-07-30 Texas Instrument Incorporated Method of fabricating microelectronic device incorporating capacitor having lowered topographical profile
US5093774A (en) * 1991-03-22 1992-03-03 Thomas & Betts Corporation Two-terminal series-connected network

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5890755A (ja) * 1981-11-25 1983-05-30 Nec Corp 半導体装置
JPH0244353B2 (ja) * 1983-09-14 1990-10-03 Mitsubishi Heavy Ind Ltd Sekinetsukookusukanshikishokasetsubinokanenseigasunoshorihoho
JPS6116561A (ja) * 1984-07-03 1986-01-24 Nec Corp 半導体装置とその使用方法
JPS6382117A (ja) * 1986-09-26 1988-04-12 Nec Corp スイツチトキヤパシタ型フイルタ回路

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6104053A (en) * 1997-09-01 2000-08-15 Mitsubishi Denki Kabushiki Kaisha Semiconductor device comprising capacitor in logic circuit area and method of fabricating the same
WO2003084085A1 (fr) * 2002-03-28 2003-10-09 Kabushiki Kaisha Toyota Jidoshokki Appareil recepteur
US7030443B2 (en) 2002-08-30 2006-04-18 Matsushita Electric Industrial Co., Ltd. MIM capacitor

Also Published As

Publication number Publication date
DE4300519A1 (https=) 1993-07-22
US5220483A (en) 1993-06-15
DE4300519C2 (de) 1998-01-22

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Effective date: 19960820