JPH0527195B2 - - Google Patents

Info

Publication number
JPH0527195B2
JPH0527195B2 JP58158723A JP15872383A JPH0527195B2 JP H0527195 B2 JPH0527195 B2 JP H0527195B2 JP 58158723 A JP58158723 A JP 58158723A JP 15872383 A JP15872383 A JP 15872383A JP H0527195 B2 JPH0527195 B2 JP H0527195B2
Authority
JP
Japan
Prior art keywords
mosfet
voltage
gate
circuit
whose
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58158723A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6050697A (ja
Inventor
Hiroshi Iwahashi
Masamichi Asano
Masaki Momotomi
Eishin Minagawa
Kazuto Suzuki
Akira Narita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Information and Control Systems Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Toshiba Information and Control Systems Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp, Toshiba Information and Control Systems Corp filed Critical Toshiba Corp
Priority to JP58158723A priority Critical patent/JPS6050697A/ja
Priority to DE8484109957T priority patent/DE3481668D1/de
Priority to EP19840109957 priority patent/EP0137245B1/en
Priority to US06/645,392 priority patent/US4697101A/en
Publication of JPS6050697A publication Critical patent/JPS6050697A/ja
Publication of JPH0527195B2 publication Critical patent/JPH0527195B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits

Landscapes

  • Read Only Memory (AREA)
  • Logic Circuits (AREA)
JP58158723A 1983-08-30 1983-08-30 半導体集積回路 Granted JPS6050697A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP58158723A JPS6050697A (ja) 1983-08-30 1983-08-30 半導体集積回路
DE8484109957T DE3481668D1 (de) 1983-08-30 1984-08-21 Integrierte halbleiterschaltung.
EP19840109957 EP0137245B1 (en) 1983-08-30 1984-08-21 Semiconductor integrated circuit
US06/645,392 US4697101A (en) 1983-08-30 1984-08-29 Read/write control circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58158723A JPS6050697A (ja) 1983-08-30 1983-08-30 半導体集積回路

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP4244973A Division JP2553290B2 (ja) 1992-09-14 1992-09-14 半導体集積回路

Publications (2)

Publication Number Publication Date
JPS6050697A JPS6050697A (ja) 1985-03-20
JPH0527195B2 true JPH0527195B2 (cs) 1993-04-20

Family

ID=15677930

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58158723A Granted JPS6050697A (ja) 1983-08-30 1983-08-30 半導体集積回路

Country Status (1)

Country Link
JP (1) JPS6050697A (cs)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6340897U (cs) * 1986-09-03 1988-03-17
JPH0793022B2 (ja) * 1988-12-24 1995-10-09 株式会社東芝 半導体メモリ集積回路
KR940006922B1 (ko) * 1991-07-11 1994-07-29 금성일렉트론 주식회사 반도체 메모리의 리던던시 회로
JPH0810557B2 (ja) * 1993-01-07 1996-01-31 日本モトローラ株式会社 メモリ装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56156985A (en) * 1980-02-04 1981-12-03 Texas Instruments Inc Decoder
JPS5735422A (en) * 1980-08-12 1982-02-26 Toshiba Corp Semiconductor circuit
JPS57143795A (en) * 1981-03-03 1982-09-06 Toshiba Corp Nonvolatile semiconductor storage device
JPS5850700A (ja) * 1981-09-21 1983-03-25 Hitachi Ltd Ｅｐｒｏｍ書込み回路

Also Published As

Publication number Publication date
JPS6050697A (ja) 1985-03-20

Similar Documents

Publication Publication Date Title
US6373325B1 (en) Semiconductor device with a charge pumping circuit
US6600679B2 (en) Level shifter for converting a voltage level and a semiconductor memory device having the level shifter
US5521866A (en) Non-volatile semiconductor memory device having floating gate
JPH0777078B2 (ja) 不揮発性半導体メモリ
JPH0738274B2 (ja) 不揮発性半導体メモリシステム
JP3451118B2 (ja) 半導体不揮発性記憶装置
JPS63188896A (ja) 不揮発性半導体メモリ
JPH02244768A (ja) 不揮発性半導体メモリ
US4974206A (en) Nonvolatile semiconductor memory device having reference potential generating circuit
JP3998908B2 (ja) 不揮発性メモリ装置
JP3935592B2 (ja) 内部電位発生回路
JPH0323999B2 (cs)
JP3520532B2 (ja) Ｎａｎｄ型不揮発性メモリの駆動方法
JPH0527195B2 (cs)
US5691944A (en) Non-volatile semiconductor memory device
JPH1166872A (ja) データ書き込み方法
JPH103794A (ja) 不揮発性記憶装置および駆動方法
JP3103457B2 (ja) 不揮発性半導体記憶装置及びその書き込み方法ならびに読み出し方法
EP0137245B1 (en) Semiconductor integrated circuit
JPH0346914B2 (cs)
JPH04229655A (ja) 不揮発性半導体記憶装置における消去方式
JP2553290B2 (ja) 半導体集積回路
JP3155821B2 (ja) 不揮発性半導体メモリ
JP3182917B2 (ja) 負電圧バイアス回路及び半導体記憶装置
JP3011415B2 (ja) 不揮発性半導体メモリ装置