JPH0523053B2 - - Google Patents
Info
- Publication number
- JPH0523053B2 JPH0523053B2 JP59058602A JP5860284A JPH0523053B2 JP H0523053 B2 JPH0523053 B2 JP H0523053B2 JP 59058602 A JP59058602 A JP 59058602A JP 5860284 A JP5860284 A JP 5860284A JP H0523053 B2 JPH0523053 B2 JP H0523053B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- ring
- dry etching
- shaped member
- etching apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000463 material Substances 0.000 claims description 18
- 238000001312 dry etching Methods 0.000 claims description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- 238000006243 chemical reaction Methods 0.000 claims description 8
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims description 2
- 229920002492 poly(sulfone) Polymers 0.000 claims description 2
- 229920001230 polyarylate Polymers 0.000 claims description 2
- 229920005672 polyolefin resin Polymers 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 1
- 229910052801 chlorine Inorganic materials 0.000 claims 1
- 239000000460 chlorine Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 description 23
- 239000004699 Ultra-high molecular weight polyethylene Substances 0.000 description 8
- 229920000785 ultra high molecular weight polyethylene Polymers 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 238000007664 blowing Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910015844 BCl3 Inorganic materials 0.000 description 1
- 125000001309 chloro group Chemical class Cl* 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59058602A JPS60201632A (ja) | 1984-03-27 | 1984-03-27 | ドライエツチング装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59058602A JPS60201632A (ja) | 1984-03-27 | 1984-03-27 | ドライエツチング装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60201632A JPS60201632A (ja) | 1985-10-12 |
| JPH0523053B2 true JPH0523053B2 (US06534493-20030318-C00166.png) | 1993-03-31 |
Family
ID=13089059
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59058602A Granted JPS60201632A (ja) | 1984-03-27 | 1984-03-27 | ドライエツチング装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60201632A (US06534493-20030318-C00166.png) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6247130A (ja) * | 1985-08-27 | 1987-02-28 | Kokusai Electric Co Ltd | 反応性イオンエツチング装置 |
| JPH07107899B2 (ja) * | 1985-11-06 | 1995-11-15 | 日電アネルバ株式会社 | ドライエツチング装置 |
| JP2506389B2 (ja) * | 1987-11-09 | 1996-06-12 | 富士通株式会社 | マスク基板のドライエッチング方法 |
| JPH0730468B2 (ja) * | 1988-06-09 | 1995-04-05 | 日電アネルバ株式会社 | ドライエッチング装置 |
| KR100281345B1 (ko) | 1992-12-01 | 2001-03-02 | 조셉 제이. 스위니 | 전자기 결합성 플래너 플라즈마 장치에서의 산화물 에칭 공정 |
| US6899785B2 (en) * | 2001-11-05 | 2005-05-31 | International Business Machines Corporation | Method of stabilizing oxide etch and chamber performance using seasoning |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5533090A (en) * | 1979-07-19 | 1980-03-08 | Anelva Corp | Etching method |
| JPS5555530A (en) * | 1978-10-18 | 1980-04-23 | Takuo Sugano | Electrode device for plasma processor |
| JPS5582438A (en) * | 1978-12-15 | 1980-06-21 | Nec Corp | Plasma etching device |
| JPS5595327A (en) * | 1979-01-16 | 1980-07-19 | Hitachi Ltd | Reactive sputter-etching |
| JPS55154582A (en) * | 1979-05-21 | 1980-12-02 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Gas plasma etching method |
| JPS57185982A (en) * | 1981-05-06 | 1982-11-16 | Perkin Elmer Corp | Plasma etching device |
-
1984
- 1984-03-27 JP JP59058602A patent/JPS60201632A/ja active Granted
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5555530A (en) * | 1978-10-18 | 1980-04-23 | Takuo Sugano | Electrode device for plasma processor |
| JPS5582438A (en) * | 1978-12-15 | 1980-06-21 | Nec Corp | Plasma etching device |
| JPS5595327A (en) * | 1979-01-16 | 1980-07-19 | Hitachi Ltd | Reactive sputter-etching |
| JPS55154582A (en) * | 1979-05-21 | 1980-12-02 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Gas plasma etching method |
| JPS5533090A (en) * | 1979-07-19 | 1980-03-08 | Anelva Corp | Etching method |
| JPS57185982A (en) * | 1981-05-06 | 1982-11-16 | Perkin Elmer Corp | Plasma etching device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60201632A (ja) | 1985-10-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |