JPH0519819B2 - - Google Patents

Info

Publication number
JPH0519819B2
JPH0519819B2 JP59087928A JP8792884A JPH0519819B2 JP H0519819 B2 JPH0519819 B2 JP H0519819B2 JP 59087928 A JP59087928 A JP 59087928A JP 8792884 A JP8792884 A JP 8792884A JP H0519819 B2 JPH0519819 B2 JP H0519819B2
Authority
JP
Japan
Prior art keywords
conductive strip
tungsten
insulating layer
layer
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59087928A
Other languages
English (en)
Japanese (ja)
Other versions
JPS605545A (ja
Inventor
Kento Buroodobento Eriotsuto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of JPS605545A publication Critical patent/JPS605545A/ja
Publication of JPH0519819B2 publication Critical patent/JPH0519819B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42—Vias, e.g. via plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H10W20/057—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches by selectively depositing, e.g. by using selective CVD or plating

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
JP59087928A 1983-05-02 1984-05-02 半導体装置とその製造方法 Granted JPS605545A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US490381 1983-05-02
US06/490,381 US4517225A (en) 1983-05-02 1983-05-02 Method for manufacturing an electrical interconnection by selective tungsten deposition

Publications (2)

Publication Number Publication Date
JPS605545A JPS605545A (ja) 1985-01-12
JPH0519819B2 true JPH0519819B2 (https=) 1993-03-17

Family

ID=23947802

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59087928A Granted JPS605545A (ja) 1983-05-02 1984-05-02 半導体装置とその製造方法

Country Status (5)

Country Link
US (1) US4517225A (https=)
EP (1) EP0124181B1 (https=)
JP (1) JPS605545A (https=)
CA (1) CA1215477A (https=)
DE (1) DE3482970D1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12298033B2 (en) 2019-01-02 2025-05-13 Dyson Technology Limited Air treatment apparatus
US12298034B2 (en) 2019-01-02 2025-05-13 Dyson Technology Limited Air treatment apparatus

Families Citing this family (44)

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US4794019A (en) * 1980-09-04 1988-12-27 Applied Materials, Inc. Refractory metal deposition process
JPS6050920A (ja) * 1983-08-30 1985-03-22 Toshiba Corp 半導体装置の製造方法
FR2566184B1 (fr) * 1984-05-11 1987-07-24 Efcis Circuits integres a plusieurs niveaux d'interconnexion en alliage d'aluminium et procede de fabrication
EP0164976B1 (en) * 1984-06-02 1990-10-24 Fujitsu Limited Method of producing a contact for a semiconductor device
US4552783A (en) * 1984-11-05 1985-11-12 General Electric Company Enhancing the selectivity of tungsten deposition on conductor and semiconductor surfaces
US4699801A (en) * 1985-02-28 1987-10-13 Kabuskiki Kaisha Toshiba Semiconductor device
US4648175A (en) * 1985-06-12 1987-03-10 Ncr Corporation Use of selectively deposited tungsten for contact formation and shunting metallization
US4630357A (en) * 1985-08-02 1986-12-23 Ncr Corporation Method for forming improved contacts between interconnect layers of an integrated circuit
US4650696A (en) * 1985-10-01 1987-03-17 Harris Corporation Process using tungsten for multilevel metallization
US4741928A (en) * 1985-12-27 1988-05-03 General Electric Company Method for selective deposition of tungsten by chemical vapor deposition onto metal and semiconductor surfaces
JPS62216224A (ja) * 1986-03-17 1987-09-22 Fujitsu Ltd タングステンの選択成長方法
US4647340A (en) * 1986-03-31 1987-03-03 Ncr Corporation Programmable read only memory using a tungsten fuse
US4968644A (en) * 1986-06-16 1990-11-06 At&T Bell Laboratories Method for fabricating devices and devices formed thereby
JPH01501985A (ja) * 1986-07-31 1989-07-06 アメリカン　テレフォン　アンド　テレグラフ　カムパニー 改良メタライゼーションを有する半導体デバイス
US4740483A (en) * 1987-03-02 1988-04-26 Motorola, Inc. Selective LPCVD tungsten deposition by nitridation of a dielectric
US4988423A (en) * 1987-06-19 1991-01-29 Matsushita Electric Industrial Co., Ltd. Method for fabricating interconnection structure
EP0322466A1 (en) * 1987-12-24 1989-07-05 Ibm Deutschland Gmbh PECVD (plasma enhanced chemical vapor deposition) method for deposition of tungsten or layers containing tungsten by in situ formation of tungsten fluorides
US5055423A (en) * 1987-12-28 1991-10-08 Texas Instruments Incorporated Planarized selective tungsten metallization system
US5071788A (en) * 1988-02-18 1991-12-10 International Business Machines Corporation Method for depositing tungsten on silicon in a non-self-limiting CVD process and semiconductor device manufactured thereby
US5212400A (en) * 1988-02-18 1993-05-18 International Business Machines Corporation Method of depositing tungsten on silicon in a non-self-limiting CVD process and semiconductor device manufactured thereby
US4997520A (en) * 1988-06-10 1991-03-05 Texas Instruments Incorporated Method for etching tungsten
US4896108A (en) * 1988-07-25 1990-01-23 American Telephone And Telegraph Company, At&T Bell Laboratories Test circuit for measuring specific contact resistivity of self-aligned contacts in integrated circuits
JP2947818B2 (ja) * 1988-07-27 1999-09-13 株式会社日立製作所 微細孔への金属穴埋め方法
US4853347A (en) * 1988-10-03 1989-08-01 Motorola, Inc. Selective metal deposition process
US4920072A (en) * 1988-10-31 1990-04-24 Texas Instruments Incorporated Method of forming metal interconnects
US4997789A (en) * 1988-10-31 1991-03-05 Texas Instruments Incorporated Aluminum contact etch mask and etchstop for tungsten etchback
US4985372A (en) * 1989-02-17 1991-01-15 Tokyo Electron Limited Method of forming conductive layer including removal of native oxide
US4920403A (en) * 1989-04-17 1990-04-24 Hughes Aircraft Company Selective tungsten interconnection for yield enhancement
US5077100A (en) * 1989-10-17 1991-12-31 Microelectronics And Computer Technology Corporation Method for forming electrical connections between copper conductors
US4987099A (en) * 1989-12-29 1991-01-22 North American Philips Corp. Method for selectively filling contacts or vias or various depths with CVD tungsten
US5180432A (en) * 1990-01-08 1993-01-19 Lsi Logic Corporation Apparatus for conducting a refractory metal deposition process
EP0437110B1 (en) * 1990-01-08 2001-07-11 Lsi Logic Corporation Structure for filtering process gases for use with a chemical vapour deposition chamber
US5231052A (en) * 1991-02-14 1993-07-27 Industrial Technology Research Institute Process for forming a multilayer polysilicon semiconductor electrode
CA2067565C (en) * 1992-04-29 1999-02-16 Ismail T. Emesh Deposition of tungsten
US5320978A (en) * 1993-07-30 1994-06-14 The United States Of America As Represented By The Secretary Of The Navy Selective area platinum film deposition
JPH07245343A (ja) * 1994-03-03 1995-09-19 Toshiba Corp 半導体装置及びその製造方法
US5561083A (en) * 1994-12-29 1996-10-01 Lucent Technologies Inc. Method of making multilayered Al-alloy structure for metal conductors
JPH08306774A (ja) * 1995-05-01 1996-11-22 Oki Electric Ind Co Ltd 半導体装置及びその製造方法
JP2978748B2 (ja) * 1995-11-22 1999-11-15 日本電気株式会社 半導体装置の製造方法
JPH09275142A (ja) * 1995-12-12 1997-10-21 Texas Instr Inc <Ti> 半導体の空隙を低温低圧で充填を行う処理方法
US20140248767A1 (en) 2013-03-01 2014-09-04 Micron Technology, Inc. Methods Of Fabricating Integrated Circuitry
US10014255B2 (en) 2016-03-14 2018-07-03 International Business Machines Corporation Contacts having a geometry to reduce resistance
US12191200B2 (en) 2021-09-29 2025-01-07 Applied Materials, Inc. Methods for minimizing feature-to-feature gap fill height variations
GB202214770D0 (en) 2022-10-07 2022-11-23 Sun Chemical Corp Primers for digital printing

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3477872A (en) * 1966-09-21 1969-11-11 Rca Corp Method of depositing refractory metals
US3697342A (en) * 1970-12-16 1972-10-10 Ibm Method of selective chemical vapor deposition
JPS5342396B2 (https=) * 1973-06-29 1978-11-10
JPS52149990A (en) * 1976-06-09 1977-12-13 Hitachi Ltd Production of multilayer wirings
US4172004A (en) * 1977-10-20 1979-10-23 International Business Machines Corporation Method for forming dense dry etched multi-level metallurgy with non-overlapped vias
GB1604074A (en) * 1978-05-17 1981-12-02 Fujitsu Ltd Semiconductor device and process for producing the same
JPS5933252B2 (ja) * 1978-07-13 1984-08-14 三菱電機株式会社 半導体装置の製造方法
JPS5585042A (en) * 1978-12-21 1980-06-26 Mitsubishi Electric Corp Semiconductor device
US4267012A (en) * 1979-04-30 1981-05-12 Fairchild Camera & Instrument Corp. Process for patterning metal connections on a semiconductor structure by using a tungsten-titanium etch resistant layer
JPS5750429A (en) * 1980-09-12 1982-03-24 Nec Corp Manufacture of semiconductor device
US4404235A (en) * 1981-02-23 1983-09-13 Rca Corporation Method for improving adhesion of metal film on a dielectric surface

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12298033B2 (en) 2019-01-02 2025-05-13 Dyson Technology Limited Air treatment apparatus
US12298034B2 (en) 2019-01-02 2025-05-13 Dyson Technology Limited Air treatment apparatus
US12607372B2 (en) 2019-01-02 2026-04-21 Dyson Technology Limited Air treatment apparatus

Also Published As

Publication number Publication date
JPS605545A (ja) 1985-01-12
DE3482970D1 (de) 1990-09-20
US4517225A (en) 1985-05-14
EP0124181B1 (en) 1990-08-16
EP0124181A2 (en) 1984-11-07
EP0124181A3 (en) 1986-09-10
CA1215477A (en) 1986-12-16

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