JPH0518470B2 - - Google Patents

Info

Publication number
JPH0518470B2
JPH0518470B2 JP26725385A JP26725385A JPH0518470B2 JP H0518470 B2 JPH0518470 B2 JP H0518470B2 JP 26725385 A JP26725385 A JP 26725385A JP 26725385 A JP26725385 A JP 26725385A JP H0518470 B2 JPH0518470 B2 JP H0518470B2
Authority
JP
Japan
Prior art keywords
region
mesa
channel stopper
semiconductor substrate
mesa groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP26725385A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62128180A (ja
Inventor
Shigeru Hasegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP26725385A priority Critical patent/JPS62128180A/ja
Publication of JPS62128180A publication Critical patent/JPS62128180A/ja
Publication of JPH0518470B2 publication Critical patent/JPH0518470B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Weting (AREA)
JP26725385A 1985-11-29 1985-11-29 メサ型半導体装置の製造方法 Granted JPS62128180A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26725385A JPS62128180A (ja) 1985-11-29 1985-11-29 メサ型半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26725385A JPS62128180A (ja) 1985-11-29 1985-11-29 メサ型半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS62128180A JPS62128180A (ja) 1987-06-10
JPH0518470B2 true JPH0518470B2 (enrdf_load_html_response) 1993-03-12

Family

ID=17442263

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26725385A Granted JPS62128180A (ja) 1985-11-29 1985-11-29 メサ型半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS62128180A (enrdf_load_html_response)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7384854B2 (en) * 2002-03-08 2008-06-10 International Business Machines Corporation Method of forming low capacitance ESD robust diodes
JP4901300B2 (ja) * 2006-05-19 2012-03-21 新電元工業株式会社 半導体装置の製造方法
US7888745B2 (en) * 2006-06-21 2011-02-15 International Business Machines Corporation Bipolar transistor with dual shallow trench isolation and low base resistance

Also Published As

Publication number Publication date
JPS62128180A (ja) 1987-06-10

Similar Documents

Publication Publication Date Title
US2861018A (en) Fabrication of semiconductive devices
US3202887A (en) Mesa-transistor with impurity concentration in the base decreasing toward collector junction
JPH05347413A (ja) 半導体装置の製造方法
JPH01135070A (ja) 半導体基板の製造方法
US3351825A (en) Semiconductor device having an anodized protective film thereon and method of manufacturing same
JPH04283914A (ja) 貼り合わせ半導体基板とその製造方法
JPH0518470B2 (enrdf_load_html_response)
JPH0258873A (ja) 積層構造半導体基板および半導体装置
JPH0462847A (ja) 半導体装置及びその製造方法
JPH01194369A (ja) 埋込ツェナー・ダイオード及びその形成方法
JPS62221122A (ja) 半導体装置の製造方法
JP2969669B2 (ja) 半導体装置の製造方法
JPS6243167A (ja) メサ型半導体装置
JPS613469A (ja) 双方向性ツエナ−ダイオ−ド
JP3465765B2 (ja) Ｉｇｂｔ用半導体基板の作製方法
KR960015929B1 (ko) 바이폴라 트랜지스터의 매입층 제조방법
JPS6126267A (ja) 双方向性ツエナ−ダイオ−ド
JPS5961191A (ja) 半導体装置の製造方法
JP2708829B2 (ja) 炭化ケイ素の電極形成方法
JPH0645429A (ja) 半導体装置の製造方法
JPS6017961A (ja) 半導体制御整流素子の製造方法
JPS58108772A (ja) トランジスタの製造方法
JPH02177557A (ja) 半導体装置の製造方法
JPS61187273A (ja) 半導体装置
JPH0277173A (ja) トランジスタ