JPH0516173B2 - - Google Patents

Info

Publication number
JPH0516173B2
JPH0516173B2 JP57175071A JP17507182A JPH0516173B2 JP H0516173 B2 JPH0516173 B2 JP H0516173B2 JP 57175071 A JP57175071 A JP 57175071A JP 17507182 A JP17507182 A JP 17507182A JP H0516173 B2 JPH0516173 B2 JP H0516173B2
Authority
JP
Japan
Prior art keywords
oxide film
substrate
film
isolation region
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57175071A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5965445A (ja
Inventor
Hideaki Takahashi
Ginjiro Kanbara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP17507182A priority Critical patent/JPS5965445A/ja
Publication of JPS5965445A publication Critical patent/JPS5965445A/ja
Publication of JPH0516173B2 publication Critical patent/JPH0516173B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
    • H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
  • Formation Of Insulating Films (AREA)
JP17507182A 1982-10-05 1982-10-05 半導体素子分離領域の形成方法 Granted JPS5965445A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17507182A JPS5965445A (ja) 1982-10-05 1982-10-05 半導体素子分離領域の形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17507182A JPS5965445A (ja) 1982-10-05 1982-10-05 半導体素子分離領域の形成方法

Publications (2)

Publication Number Publication Date
JPS5965445A JPS5965445A (ja) 1984-04-13
JPH0516173B2 true JPH0516173B2 (enrdf_load_stackoverflow) 1993-03-03

Family

ID=15989717

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17507182A Granted JPS5965445A (ja) 1982-10-05 1982-10-05 半導体素子分離領域の形成方法

Country Status (1)

Country Link
JP (1) JPS5965445A (enrdf_load_stackoverflow)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8401711A (nl) * 1984-05-29 1985-12-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting met een siliciumlichaam waarin plaatselijk een verzonken oxidelaag is aangebracht.
JPH01315141A (ja) * 1988-06-15 1989-12-20 Toshiba Corp 半導体装置の製造方法
US5260229A (en) * 1991-08-30 1993-11-09 Sgs-Thomson Microelectronics, Inc. Method of forming isolated regions of oxide
US5348910A (en) * 1991-12-24 1994-09-20 Seiko Epson Corporation Method of manufacturing a semiconductor device and the product thereby
EP0637074A3 (en) 1993-07-30 1995-06-21 Sgs Thomson Microelectronics Process for the production of active and isolated areas by split imaging.
US5977607A (en) * 1994-09-12 1999-11-02 Stmicroelectronics, Inc. Method of forming isolated regions of oxide
KR100197651B1 (ko) * 1995-11-03 1999-06-15 김영환 반도체 소자의 소자 분리막 제조방법
US5972776A (en) * 1995-12-22 1999-10-26 Stmicroelectronics, Inc. Method of forming a planar isolation structure in an integrated circuit
US5834360A (en) * 1996-07-31 1998-11-10 Stmicroelectronics, Inc. Method of forming an improved planar isolation structure in an integrated circuit

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4333964A (en) * 1980-09-15 1982-06-08 General Electric Company Method of making integrated circuits

Also Published As

Publication number Publication date
JPS5965445A (ja) 1984-04-13

Similar Documents

Publication Publication Date Title
JP2521611B2 (ja) ツインウェルを有するｃｍｏｓの製造方法
JPH0516173B2 (enrdf_load_stackoverflow)
JPS6242382B2 (enrdf_load_stackoverflow)
JP2859332B2 (ja) 半導体装置の製造方法
JPH0210730A (ja) 集積回路チップ上の電界効果トランジスタ用のフィールド・アイソレーション形成方法と構造
JPH03101250A (ja) 半導体装置の製造方法
JPH0316150A (ja) 半導体素子の製造方法
JPH0846026A (ja) 素子分離領域を有する半導体装置の製造方法
JPS603157A (ja) 半導体装置の製造方法
JPH0274042A (ja) Ｍｉｓ型トランジスタの製造方法
JPS61251165A (ja) Ｂｉ−ＭＩＳ集積回路の製造方法
JPS6331124A (ja) 半導体装置の製造方法
JPS61112344A (ja) 半導体素子分離領域の形成方法
JPH03159240A (ja) 半導体装置の製造方法
JPS6148935A (ja) 半導体装置の製造方法
JPH01173632A (ja) 半導体装置の製造方法
JPH01123471A (ja) 半導体装置の製造方法
JPS5943832B2 (ja) 半導体装置の製造方法
JPH0480927A (ja) 半導体装置の製造方法
JPH0239438A (ja) 半導体装置の製造方法
JPS6229163A (ja) 半導体装置およびその製造方法
JPS5963741A (ja) 半導体装置の製造方法
JPS63144544A (ja) 半導体素子間分離領域の形成方法
JPS6358963A (ja) シヨツトキバリヤダイオ−ドの製造方法
JPS5918674A (ja) 半導体装置の製造方法