JPH0514899B2 - - Google Patents

Info

Publication number
JPH0514899B2
JPH0514899B2 JP59100751A JP10075184A JPH0514899B2 JP H0514899 B2 JPH0514899 B2 JP H0514899B2 JP 59100751 A JP59100751 A JP 59100751A JP 10075184 A JP10075184 A JP 10075184A JP H0514899 B2 JPH0514899 B2 JP H0514899B2
Authority
JP
Japan
Prior art keywords
gas
film
sif
flow rate
gas flow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59100751A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60243663A (ja
Inventor
Takao Kawamura
Yoshikazu Nakayama
Koji Akyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP59100751A priority Critical patent/JPS60243663A/ja
Priority to US06/654,197 priority patent/US4624906A/en
Publication of JPS60243663A publication Critical patent/JPS60243663A/ja
Publication of JPH0514899B2 publication Critical patent/JPH0514899B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08221—Silicon-based comprising one or two silicon based layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08278—Depositing methods

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Chemical Vapour Deposition (AREA)
JP59100751A 1984-05-18 1984-05-18 電子写真感光体 Granted JPS60243663A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP59100751A JPS60243663A (ja) 1984-05-18 1984-05-18 電子写真感光体
US06/654,197 US4624906A (en) 1984-05-18 1984-09-24 Electrophotographic sensitive member having a fluorinated amorphous silicon photoconductive layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59100751A JPS60243663A (ja) 1984-05-18 1984-05-18 電子写真感光体

Publications (2)

Publication Number Publication Date
JPS60243663A JPS60243663A (ja) 1985-12-03
JPH0514899B2 true JPH0514899B2 (enExample) 1993-02-26

Family

ID=14282223

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59100751A Granted JPS60243663A (ja) 1984-05-18 1984-05-18 電子写真感光体

Country Status (2)

Country Link
US (1) US4624906A (enExample)
JP (1) JPS60243663A (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4849315A (en) * 1985-01-21 1989-07-18 Xerox Corporation Processes for restoring hydrogenated and halogenated amorphous silicon imaging members
US4772486A (en) * 1985-02-18 1988-09-20 Canon Kabushiki Kaisha Process for forming a deposited film
JP2635021B2 (ja) * 1985-09-26 1997-07-30 宣夫 御子柴 堆積膜形成法及びこれに用いる装置
US4818564A (en) * 1985-10-23 1989-04-04 Canon Kabushiki Kaisha Method for forming deposited film
US4812325A (en) * 1985-10-23 1989-03-14 Canon Kabushiki Kaisha Method for forming a deposited film
JPH0752305B2 (ja) * 1985-12-11 1995-06-05 キヤノン株式会社 電子写真感光体の製造方法
JPS62136885A (ja) * 1985-12-11 1987-06-19 Canon Inc 光起電力素子、その製造方法及びその製造装置
JPS62136871A (ja) * 1985-12-11 1987-06-19 Canon Inc 光センサ−、その製造方法及びその製造装置
JPH0645886B2 (ja) * 1985-12-16 1994-06-15 キヤノン株式会社 堆積膜形成法
JPH0647730B2 (ja) * 1985-12-25 1994-06-22 キヤノン株式会社 堆積膜形成法
JPH0651906B2 (ja) * 1985-12-25 1994-07-06 キヤノン株式会社 堆積膜形成法
US5391232A (en) * 1985-12-26 1995-02-21 Canon Kabushiki Kaisha Device for forming a deposited film
US5322568A (en) * 1985-12-28 1994-06-21 Canon Kabushiki Kaisha Apparatus for forming deposited film
JPH084070B2 (ja) * 1985-12-28 1996-01-17 キヤノン株式会社 薄膜半導体素子及びその形成法
JPH0651909B2 (ja) * 1985-12-28 1994-07-06 キヤノン株式会社 薄膜多層構造の形成方法
GB2185758B (en) * 1985-12-28 1990-09-05 Canon Kk Method for forming deposited film
JPH0651908B2 (ja) * 1985-12-28 1994-07-06 キヤノン株式会社 薄膜多層構造の形成方法
JP2566914B2 (ja) * 1985-12-28 1996-12-25 キヤノン株式会社 薄膜半導体素子及びその形成法
US5366554A (en) * 1986-01-14 1994-11-22 Canon Kabushiki Kaisha Device for forming a deposited film
US4800173A (en) * 1986-02-20 1989-01-24 Canon Kabushiki Kaisha Process for preparing Si or Ge epitaxial film using fluorine oxidant
TWI396590B (zh) * 2009-10-30 2013-05-21 Atomic Energy Council 氣體反應裝置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55166647A (en) * 1979-06-15 1980-12-25 Fuji Photo Film Co Ltd Photoconductive composition and electrophotographic receptor using this
JPS5727263A (en) * 1980-07-28 1982-02-13 Hitachi Ltd Electrophotographic photosensitive film
US4468443A (en) * 1981-03-12 1984-08-28 Canon Kabushiki Kaisha Process for producing photoconductive member from gaseous silicon compounds
JPS58100135A (ja) * 1981-11-06 1983-06-14 Konishiroku Photo Ind Co Ltd 感光体
JPS58159325A (ja) * 1982-03-17 1983-09-21 Minolta Camera Co Ltd 感光体

Also Published As

Publication number Publication date
JPS60243663A (ja) 1985-12-03
US4624906A (en) 1986-11-25

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term