JPH0514432B2 - - Google Patents

Info

Publication number
JPH0514432B2
JPH0514432B2 JP58149082A JP14908283A JPH0514432B2 JP H0514432 B2 JPH0514432 B2 JP H0514432B2 JP 58149082 A JP58149082 A JP 58149082A JP 14908283 A JP14908283 A JP 14908283A JP H0514432 B2 JPH0514432 B2 JP H0514432B2
Authority
JP
Japan
Prior art keywords
manufacturing
gas containing
semiconductor device
halogen element
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58149082A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6041266A (ja
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP58149082A priority Critical patent/JPS6041266A/ja
Publication of JPS6041266A publication Critical patent/JPS6041266A/ja
Publication of JPH0514432B2 publication Critical patent/JPH0514432B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass

Landscapes

  • Photovoltaic Devices (AREA)
  • Drying Of Semiconductors (AREA)
JP58149082A 1983-08-15 1983-08-15 半導体装置作製方法およびその作製用装置 Granted JPS6041266A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58149082A JPS6041266A (ja) 1983-08-15 1983-08-15 半導体装置作製方法およびその作製用装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58149082A JPS6041266A (ja) 1983-08-15 1983-08-15 半導体装置作製方法およびその作製用装置

Publications (2)

Publication Number Publication Date
JPS6041266A JPS6041266A (ja) 1985-03-04
JPH0514432B2 true JPH0514432B2 (enExample) 1993-02-25

Family

ID=15467299

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58149082A Granted JPS6041266A (ja) 1983-08-15 1983-08-15 半導体装置作製方法およびその作製用装置

Country Status (1)

Country Link
JP (1) JPS6041266A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005504445A (ja) * 2001-10-01 2005-02-10 エグシル テクノロジー リミテッド 基板、特に半導体ウェハの加工
JP2006527477A (ja) * 2003-06-06 2006-11-30 エグシル テクノロジー リミテッド 界面活性剤膜を用いるレーザ切削加工

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3917698B2 (ja) 1996-12-12 2007-05-23 株式会社半導体エネルギー研究所 レーザーアニール方法およびレーザーアニール装置
KR101172178B1 (ko) * 2010-09-01 2012-08-07 엘지이노텍 주식회사 태양광 발전장치 및 이의 제조방법

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4292092A (en) * 1980-06-02 1981-09-29 Rca Corporation Laser processing technique for fabricating series-connected and tandem junction series-connected solar cells into a solar battery
US4315096A (en) * 1980-07-25 1982-02-09 Eastman Kodak Company Integrated array of photovoltaic cells having minimized shorting losses
FR2503457B1 (fr) * 1981-03-31 1987-01-23 Rca Corp Systeme de cellules solaires connectees en serie sur un substrat unique

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005504445A (ja) * 2001-10-01 2005-02-10 エグシル テクノロジー リミテッド 基板、特に半導体ウェハの加工
JP2010016392A (ja) * 2001-10-01 2010-01-21 Xsil Technology Ltd 基板、特に半導体ウェハの加工
JP2006527477A (ja) * 2003-06-06 2006-11-30 エグシル テクノロジー リミテッド 界面活性剤膜を用いるレーザ切削加工
JP2012110964A (ja) * 2003-06-06 2012-06-14 Electro Scientific Industries Inc 界面活性剤膜を用いるレーザ切削加工

Also Published As

Publication number Publication date
JPS6041266A (ja) 1985-03-04

Similar Documents

Publication Publication Date Title
EP1404481B1 (en) A laser machining system and method
TWI557789B (zh) 使用基板載具之混成雷射與電漿蝕刻晶圓切割
US4650524A (en) Method for dividing semiconductor film formed on a substrate into plural regions by backside energy beam irradiation
JP6081993B2 (ja) プラズマエッチングを伴うハイブリッドガルバニックレーザスクライビングプロセスを用いたウェハダイシング
WO2003067671A1 (en) Process for producing photovoltaic devices
WO2013009575A2 (en) Wafer dicing using hybrid split-beam laser scribing process with plasma etch
TW201517171A (zh) 無遮罩混合式雷射劃線及電漿蝕刻晶圓切割製程
JPH0514432B2 (enExample)
CN113146061A (zh) 双光束蚀刻大幅面导电薄膜的激光加工装置及其方法
CN102615421A (zh) 多层薄膜基板加工方法及装置
JPH1079522A (ja) 薄膜光電変換装置およびその製造方法
JPH034319B2 (enExample)
JPH0123237B2 (enExample)
JPH0426957B2 (enExample)
JP2000208798A (ja) 薄膜構成体の加工方法
JPS59206195A (ja) レ−ザ加工方法
KR840006876A (ko) 광전변환장치 및 그 제조방법
JP2000208799A (ja) 薄膜構成体の加工方法
JPS59198771A (ja) 光電変換装置作製方法
JPS6037288A (ja) レーザ加工方法
JP2594113B2 (ja) 酸化錫膜の形成方法
JPS6082286A (ja) レ−ザ加工方法
Shaver et al. Production applications of laser microchemistry
JPS6066872A (ja) 半導体装置作製方法
JPH0712032B2 (ja) 有機樹脂上被膜のレーザ加工方法