JPH0510835B2 - - Google Patents

Info

Publication number
JPH0510835B2
JPH0510835B2 JP59096080A JP9608084A JPH0510835B2 JP H0510835 B2 JPH0510835 B2 JP H0510835B2 JP 59096080 A JP59096080 A JP 59096080A JP 9608084 A JP9608084 A JP 9608084A JP H0510835 B2 JPH0510835 B2 JP H0510835B2
Authority
JP
Japan
Prior art keywords
amorphous silicon
transparent
transparent electrode
silicon solar
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP59096080A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60240166A (ja
Inventor
Toshio Mishuku
Hideyo Iida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiyo Yuden Co Ltd
Original Assignee
Taiyo Yuden Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiyo Yuden Co Ltd filed Critical Taiyo Yuden Co Ltd
Priority to JP59096080A priority Critical patent/JPS60240166A/ja
Publication of JPS60240166A publication Critical patent/JPS60240166A/ja
Publication of JPH0510835B2 publication Critical patent/JPH0510835B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
JP59096080A 1984-05-14 1984-05-14 非晶質シリコン太陽電池及びその製造方法 Granted JPS60240166A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59096080A JPS60240166A (ja) 1984-05-14 1984-05-14 非晶質シリコン太陽電池及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59096080A JPS60240166A (ja) 1984-05-14 1984-05-14 非晶質シリコン太陽電池及びその製造方法

Publications (2)

Publication Number Publication Date
JPS60240166A JPS60240166A (ja) 1985-11-29
JPH0510835B2 true JPH0510835B2 (enrdf_load_stackoverflow) 1993-02-10

Family

ID=14155411

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59096080A Granted JPS60240166A (ja) 1984-05-14 1984-05-14 非晶質シリコン太陽電池及びその製造方法

Country Status (1)

Country Link
JP (1) JPS60240166A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61115354A (ja) * 1984-11-12 1986-06-02 Agency Of Ind Science & Technol 非晶質半導体太陽電池
JPS62198169A (ja) * 1986-02-25 1987-09-01 Fuji Electric Corp Res & Dev Ltd 太陽電池
JPH0784651B2 (ja) * 1986-06-20 1995-09-13 ティーディーケイ株式会社 透明導電膜およびその製造方法
JP2002042560A (ja) * 2000-07-31 2002-02-08 Toppan Printing Co Ltd 導電性部材及びそれを用いた表示装置及びその製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5952955B2 (ja) * 1979-12-06 1984-12-22 松下電器産業株式会社 超微粒子材料膜の製造方法
JPS5857756A (ja) * 1981-10-01 1983-04-06 Agency Of Ind Science & Technol 非晶質太陽電池
US4532537A (en) * 1982-09-27 1985-07-30 Rca Corporation Photodetector with enhanced light absorption
JPS59161881A (ja) * 1983-03-07 1984-09-12 Semiconductor Energy Lab Co Ltd 光電変換装置作製方法

Also Published As

Publication number Publication date
JPS60240166A (ja) 1985-11-29

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees