JPS60240166A - 非晶質シリコン太陽電池及びその製造方法 - Google Patents

非晶質シリコン太陽電池及びその製造方法

Info

Publication number
JPS60240166A
JPS60240166A JP59096080A JP9608084A JPS60240166A JP S60240166 A JPS60240166 A JP S60240166A JP 59096080 A JP59096080 A JP 59096080A JP 9608084 A JP9608084 A JP 9608084A JP S60240166 A JPS60240166 A JP S60240166A
Authority
JP
Japan
Prior art keywords
amorphous silicon
transparent electrode
transparent
substrate
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59096080A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0510835B2 (enrdf_load_stackoverflow
Inventor
Toshio Miyado
俊雄 三宿
Hideyo Iida
英世 飯田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiyo Yuden Co Ltd
Original Assignee
Taiyo Yuden Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiyo Yuden Co Ltd filed Critical Taiyo Yuden Co Ltd
Priority to JP59096080A priority Critical patent/JPS60240166A/ja
Publication of JPS60240166A publication Critical patent/JPS60240166A/ja
Publication of JPH0510835B2 publication Critical patent/JPH0510835B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
JP59096080A 1984-05-14 1984-05-14 非晶質シリコン太陽電池及びその製造方法 Granted JPS60240166A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59096080A JPS60240166A (ja) 1984-05-14 1984-05-14 非晶質シリコン太陽電池及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59096080A JPS60240166A (ja) 1984-05-14 1984-05-14 非晶質シリコン太陽電池及びその製造方法

Publications (2)

Publication Number Publication Date
JPS60240166A true JPS60240166A (ja) 1985-11-29
JPH0510835B2 JPH0510835B2 (enrdf_load_stackoverflow) 1993-02-10

Family

ID=14155411

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59096080A Granted JPS60240166A (ja) 1984-05-14 1984-05-14 非晶質シリコン太陽電池及びその製造方法

Country Status (1)

Country Link
JP (1) JPS60240166A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61115354A (ja) * 1984-11-12 1986-06-02 Agency Of Ind Science & Technol 非晶質半導体太陽電池
JPS62198169A (ja) * 1986-02-25 1987-09-01 Fuji Electric Corp Res & Dev Ltd 太陽電池
JPS63456A (ja) * 1986-06-20 1988-01-05 Tdk Corp 太陽電池用透明導岩膜の製造方法
JP2002042560A (ja) * 2000-07-31 2002-02-08 Toppan Printing Co Ltd 導電性部材及びそれを用いた表示装置及びその製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5681673A (en) * 1979-12-06 1981-07-03 Matsushita Electric Ind Co Ltd Manufacture of film with ultrafine granular material
JPS5857756A (ja) * 1981-10-01 1983-04-06 Agency Of Ind Science & Technol 非晶質太陽電池
JPS5961973A (ja) * 1982-09-27 1984-04-09 ア−ルシ−エ−　コ−ポレ−ション 光検知器
JPS59161881A (ja) * 1983-03-07 1984-09-12 Semiconductor Energy Lab Co Ltd 光電変換装置作製方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5681673A (en) * 1979-12-06 1981-07-03 Matsushita Electric Ind Co Ltd Manufacture of film with ultrafine granular material
JPS5857756A (ja) * 1981-10-01 1983-04-06 Agency Of Ind Science & Technol 非晶質太陽電池
JPS5961973A (ja) * 1982-09-27 1984-04-09 ア−ルシ−エ−　コ−ポレ−ション 光検知器
JPS59161881A (ja) * 1983-03-07 1984-09-12 Semiconductor Energy Lab Co Ltd 光電変換装置作製方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61115354A (ja) * 1984-11-12 1986-06-02 Agency Of Ind Science & Technol 非晶質半導体太陽電池
JPS62198169A (ja) * 1986-02-25 1987-09-01 Fuji Electric Corp Res & Dev Ltd 太陽電池
JPS63456A (ja) * 1986-06-20 1988-01-05 Tdk Corp 太陽電池用透明導岩膜の製造方法
JP2002042560A (ja) * 2000-07-31 2002-02-08 Toppan Printing Co Ltd 導電性部材及びそれを用いた表示装置及びその製造方法

Also Published As

Publication number Publication date
JPH0510835B2 (enrdf_load_stackoverflow) 1993-02-10

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees