JPH0481894B2 - - Google Patents
Info
- Publication number
- JPH0481894B2 JPH0481894B2 JP61255023A JP25502386A JPH0481894B2 JP H0481894 B2 JPH0481894 B2 JP H0481894B2 JP 61255023 A JP61255023 A JP 61255023A JP 25502386 A JP25502386 A JP 25502386A JP H0481894 B2 JPH0481894 B2 JP H0481894B2
- Authority
- JP
- Japan
- Prior art keywords
- gate
- voltage
- source
- resistor
- fet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 11
- 230000003287 optical effect Effects 0.000 claims description 6
- 238000003491 array Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 230000001052 transient effect Effects 0.000 description 3
- 101150015217 FET4 gene Proteins 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007599 discharging Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
- H03K17/785—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
- H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
Landscapes
- Electronic Switches (AREA)
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/078,791 US4801822A (en) | 1986-08-11 | 1987-07-28 | Semiconductor switching circuit |
| CA 543599 CA1275708C (en) | 1986-08-11 | 1987-07-31 | Semiconductor switching circuit |
| KR1019870008570A KR900005818B1 (ko) | 1986-08-11 | 1987-08-05 | 반도체 스위칭회로 |
| FR8711362A FR2602620B1 (fr) | 1986-08-11 | 1987-08-10 | Circuit de commutation a semiconducteurs |
| SE8703111A SE500062C2 (sv) | 1986-08-11 | 1987-08-10 | Elektronisk elkopplare |
| GB8718919A GB2194699B (en) | 1986-08-11 | 1987-08-10 | Semiconductor switching circuit |
| IT8748295A IT1211712B (it) | 1986-08-11 | 1987-08-11 | Circuito di commutazione a semiconduttore |
| DE19873726682 DE3726682A1 (de) | 1986-08-11 | 1987-08-11 | Halbleiter-schaltkreis |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61-188272 | 1986-08-11 | ||
| JP18827286 | 1986-08-11 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63153916A JPS63153916A (ja) | 1988-06-27 |
| JPH0481894B2 true JPH0481894B2 (enExample) | 1992-12-25 |
Family
ID=16220761
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61255023A Granted JPS63153916A (ja) | 1986-08-11 | 1986-10-27 | 半導体スイツチ回路 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS63153916A (enExample) |
| KR (1) | KR900005818B1 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2757438B2 (ja) * | 1989-03-17 | 1998-05-25 | 松下電工株式会社 | 光結合型リレー回路 |
| JPH03238918A (ja) * | 1990-02-15 | 1991-10-24 | Matsushita Electric Works Ltd | 半導体リレー回路 |
| JPH0812993B2 (ja) * | 1990-10-26 | 1996-02-07 | 松下電工株式会社 | 半導体リレー回路 |
| JPH0812992B2 (ja) * | 1990-10-26 | 1996-02-07 | 松下電工株式会社 | 半導体リレー回路 |
| US5138177A (en) * | 1991-03-26 | 1992-08-11 | At&T Bell Laboratories | Solid-state relay |
| JP2009147022A (ja) * | 2007-12-12 | 2009-07-02 | Toshiba Corp | 光半導体リレー |
| JP7357562B2 (ja) * | 2020-02-04 | 2023-10-06 | 日清紡マイクロデバイス株式会社 | 高周波スイッチ回路 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5629458B2 (enExample) * | 1973-07-02 | 1981-07-08 | ||
| JPS5368066A (en) * | 1976-11-30 | 1978-06-17 | Hitachi Ltd | Semiconductor switch |
| JPS553259A (en) * | 1978-06-21 | 1980-01-11 | Fujitsu Ltd | Switching circuit |
| JPS5529972U (enExample) * | 1978-08-16 | 1980-02-27 | ||
| US4492883A (en) * | 1982-06-21 | 1985-01-08 | Eaton Corporation | Unpowered fast gate turn-off FET |
| JPS61165210A (ja) * | 1985-01-17 | 1986-07-25 | Ishikawajima Harima Heavy Ind Co Ltd | 圧延機 |
| JPH0478210A (ja) * | 1990-07-18 | 1992-03-12 | Miharu Tsushin Kk | ノッチフィルター又はバンドエルミネートフィルターの周波数自動制御方法 |
-
1986
- 1986-10-27 JP JP61255023A patent/JPS63153916A/ja active Granted
-
1987
- 1987-08-05 KR KR1019870008570A patent/KR900005818B1/ko not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| KR900005818B1 (ko) | 1990-08-11 |
| KR880003483A (ko) | 1988-05-17 |
| JPS63153916A (ja) | 1988-06-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA1275708C (en) | Semiconductor switching circuit | |
| JPH0412631B2 (enExample) | ||
| EP0398246B1 (en) | Photocoupler apparatus capable of shortening switching time of output contact | |
| US5138186A (en) | Solid state switch with last state memory | |
| US5514996A (en) | Photo-coupler apparatus | |
| JPH0481894B2 (enExample) | ||
| JPS62296617A (ja) | 半導体リレ−回路 | |
| JPH10308529A (ja) | 半導体リレー | |
| JPH0477015A (ja) | 光結合型リレー回路 | |
| JP3470488B2 (ja) | 半導体リレー回路 | |
| JPS63283082A (ja) | 光結合半導体装置 | |
| JP2731654B2 (ja) | 光結合型リレー回路 | |
| JPH05343972A (ja) | 半導体リレー回路 | |
| JPH05191244A (ja) | 半導体リレー | |
| JPH0420010A (ja) | 光結合型リレー回路 | |
| JP2731655B2 (ja) | 光結合型リレー回路 | |
| JPH0479175B2 (enExample) | ||
| JPH02135819A (ja) | 光結合型リレー回路 | |
| JPH02100417A (ja) | 光mosリレー | |
| JP2003115756A (ja) | 半導体スイッチ素子の駆動回路およびそれを用いた半導体リレー | |
| JPH0998079A (ja) | 半導体リレー | |
| JPH04159811A (ja) | 光結合型リレー回路 | |
| JPH0290721A (ja) | 光結合型リレー回路 | |
| JPH02253718A (ja) | 固体リレー | |
| JPH05315927A (ja) | 半導体リレー回路 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |