JPS553259A - Switching circuit - Google Patents
Switching circuitInfo
- Publication number
- JPS553259A JPS553259A JP7581078A JP7581078A JPS553259A JP S553259 A JPS553259 A JP S553259A JP 7581078 A JP7581078 A JP 7581078A JP 7581078 A JP7581078 A JP 7581078A JP S553259 A JPS553259 A JP S553259A
- Authority
- JP
- Japan
- Prior art keywords
- trq1
- diode
- potential side
- series
- connection point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
- H03K17/601—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors using transformer coupling
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electronic Switches (AREA)
Abstract
PURPOSE:To prevent the penetration phenomenon through a simple circuit constitution by providing the diode featuring the forward connection relation between two series-connected switching elements and then applying the reverse bias to the switching element of the higher potential side. CONSTITUTION:Transistors TrQ1 and Q2 forming two switching elements are connected in series to power source Va, and the alternating switching control is given to TrQ1 and Q2. Thus resistance R2 is connected to diode D featuring the forward connection between TrQ1 and Q2 connected in series for the circuit which applies the alternating voltage to the load from the serial connection point of TrQ1 and Q2. At the same time, the connection point of one end of diode D and TrQ2 of the lower potential side is connected to the gate electrode of TrQ1 of the higher potential side, and the capacity load is connected to the connection point between the emitter of TrQ1 and the other end of diode D. Then the reverse bias is applied to TrQ1 of the higher potential side to prevent the penetration phenomenon.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7581078A JPS553259A (en) | 1978-06-21 | 1978-06-21 | Switching circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7581078A JPS553259A (en) | 1978-06-21 | 1978-06-21 | Switching circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS553259A true JPS553259A (en) | 1980-01-11 |
Family
ID=13586907
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7581078A Pending JPS553259A (en) | 1978-06-21 | 1978-06-21 | Switching circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS553259A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS596624A (en) * | 1982-07-02 | 1984-01-13 | Hitachi Ltd | Circuit for driving gate of mosfet |
JPS60208119A (en) * | 1984-03-30 | 1985-10-19 | Hitachi Ltd | Semiconductor switch |
JPS60217730A (en) * | 1984-04-13 | 1985-10-31 | Hitachi Ltd | Semiconductor device |
JPS6399616A (en) * | 1986-03-24 | 1988-04-30 | Matsushita Electric Works Ltd | Solid-state relay and its manufacture |
JPS63153916A (en) * | 1986-08-11 | 1988-06-27 | Matsushita Electric Works Ltd | Semiconductor switching circuit |
JPH04309010A (en) * | 1991-04-05 | 1992-10-30 | Hamamatsu Photonics Kk | Square wave generating circuit |
-
1978
- 1978-06-21 JP JP7581078A patent/JPS553259A/en active Pending
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS596624A (en) * | 1982-07-02 | 1984-01-13 | Hitachi Ltd | Circuit for driving gate of mosfet |
JPS60208119A (en) * | 1984-03-30 | 1985-10-19 | Hitachi Ltd | Semiconductor switch |
JPH0414806B2 (en) * | 1984-03-30 | 1992-03-16 | Hitachi Seisakusho Kk | |
JPS60217730A (en) * | 1984-04-13 | 1985-10-31 | Hitachi Ltd | Semiconductor device |
JPH056806B2 (en) * | 1984-04-13 | 1993-01-27 | Hitachi Ltd | |
JPS6399616A (en) * | 1986-03-24 | 1988-04-30 | Matsushita Electric Works Ltd | Solid-state relay and its manufacture |
JPH0478210B2 (en) * | 1986-03-24 | 1992-12-10 | Matsushita Electric Works Ltd | |
JPS63153916A (en) * | 1986-08-11 | 1988-06-27 | Matsushita Electric Works Ltd | Semiconductor switching circuit |
JPH04309010A (en) * | 1991-04-05 | 1992-10-30 | Hamamatsu Photonics Kk | Square wave generating circuit |
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