JPH0481345B2 - - Google Patents
Info
- Publication number
- JPH0481345B2 JPH0481345B2 JP57117302A JP11730282A JPH0481345B2 JP H0481345 B2 JPH0481345 B2 JP H0481345B2 JP 57117302 A JP57117302 A JP 57117302A JP 11730282 A JP11730282 A JP 11730282A JP H0481345 B2 JPH0481345 B2 JP H0481345B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- forming
- recess
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 230000005669 field effect Effects 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11730282A JPS598374A (ja) | 1982-07-05 | 1982-07-05 | 縦型構造電界効果トランジスタの製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11730282A JPS598374A (ja) | 1982-07-05 | 1982-07-05 | 縦型構造電界効果トランジスタの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS598374A JPS598374A (ja) | 1984-01-17 |
JPH0481345B2 true JPH0481345B2 (fr) | 1992-12-22 |
Family
ID=14708384
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11730282A Granted JPS598374A (ja) | 1982-07-05 | 1982-07-05 | 縦型構造電界効果トランジスタの製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS598374A (fr) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4992228A (en) * | 1989-09-28 | 1991-02-12 | The Dow Chemical Company | Method for preparing preforms for molding processes |
US6603173B1 (en) | 1991-07-26 | 2003-08-05 | Denso Corporation | Vertical type MOSFET |
US5460985A (en) * | 1991-07-26 | 1995-10-24 | Ipics Corporation | Production method of a verticle type MOSFET |
US6015737A (en) * | 1991-07-26 | 2000-01-18 | Denso Corporation | Production method of a vertical type MOSFET |
US5427725A (en) * | 1993-05-07 | 1995-06-27 | The Dow Chemical Company | Process for resin transfer molding and preform used in the process |
TW297046B (fr) * | 1993-06-15 | 1997-02-01 | Dow Chemical Co | |
EP0676814B1 (fr) * | 1994-04-06 | 2006-03-22 | Denso Corporation | Procédé de fabrication d'un dispositif semi-conducteur avec un sillon |
AU706556B2 (en) * | 1994-10-28 | 1999-06-17 | Dow Chemical Company, The | Improved process for resin transfer molding |
JP3307785B2 (ja) * | 1994-12-13 | 2002-07-24 | 三菱電機株式会社 | 絶縁ゲート型半導体装置 |
US5698318A (en) * | 1995-05-23 | 1997-12-16 | The Dow Chemical Company | Process for resin transfer molding and formulations useful to practice it |
JP3201221B2 (ja) * | 1995-07-05 | 2001-08-20 | 日本電気株式会社 | 半導体装置の製造方法 |
JP5500002B2 (ja) | 2010-08-31 | 2014-05-21 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54125987A (en) * | 1978-02-17 | 1979-09-29 | Siliconix Inc | Vmos metha structure and method of fabricating same |
JPS55133574A (en) * | 1979-04-05 | 1980-10-17 | Nec Corp | Insulated gate field effect transistor |
JPS55134981A (en) * | 1979-04-09 | 1980-10-21 | Ibm | Method of manufacturing semiconductor device |
-
1982
- 1982-07-05 JP JP11730282A patent/JPS598374A/ja active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54125987A (en) * | 1978-02-17 | 1979-09-29 | Siliconix Inc | Vmos metha structure and method of fabricating same |
JPS55133574A (en) * | 1979-04-05 | 1980-10-17 | Nec Corp | Insulated gate field effect transistor |
JPS55134981A (en) * | 1979-04-09 | 1980-10-21 | Ibm | Method of manufacturing semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS598374A (ja) | 1984-01-17 |
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