JPH0481339B2 - - Google Patents

Info

Publication number
JPH0481339B2
JPH0481339B2 JP57150960A JP15096082A JPH0481339B2 JP H0481339 B2 JPH0481339 B2 JP H0481339B2 JP 57150960 A JP57150960 A JP 57150960A JP 15096082 A JP15096082 A JP 15096082A JP H0481339 B2 JPH0481339 B2 JP H0481339B2
Authority
JP
Japan
Prior art keywords
film
substrate
well
forming
coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57150960A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5940563A (ja
Inventor
Sunao Shibata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP57150960A priority Critical patent/JPS5940563A/ja
Publication of JPS5940563A publication Critical patent/JPS5940563A/ja
Publication of JPH0481339B2 publication Critical patent/JPH0481339B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP57150960A 1982-08-31 1982-08-31 半導体装置の製造方法 Granted JPS5940563A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57150960A JPS5940563A (ja) 1982-08-31 1982-08-31 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57150960A JPS5940563A (ja) 1982-08-31 1982-08-31 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5940563A JPS5940563A (ja) 1984-03-06
JPH0481339B2 true JPH0481339B2 (pt) 1992-12-22

Family

ID=15508191

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57150960A Granted JPS5940563A (ja) 1982-08-31 1982-08-31 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5940563A (pt)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61500140A (ja) * 1983-10-11 1986-01-23 アメリカン テレフオン アンド テレグラフ カムパニ− 相補型金属−酸化物−半導体デバイスを含む半導体回路
US4656730A (en) * 1984-11-23 1987-04-14 American Telephone And Telegraph Company, At&T Bell Laboratories Method for fabricating CMOS devices
JPS6252957A (ja) * 1985-09-02 1987-03-07 Toshiba Corp Ｃｍｏｓ半導体装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55148466A (en) * 1979-05-10 1980-11-19 Nec Corp Cmos semiconductor device and its manufacture
JPS55154770A (en) * 1979-05-23 1980-12-02 Toshiba Corp Manufacture of complementary mos semiconductor device
JPS55154748A (en) * 1979-05-23 1980-12-02 Toshiba Corp Complementary mos semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55148466A (en) * 1979-05-10 1980-11-19 Nec Corp Cmos semiconductor device and its manufacture
JPS55154770A (en) * 1979-05-23 1980-12-02 Toshiba Corp Manufacture of complementary mos semiconductor device
JPS55154748A (en) * 1979-05-23 1980-12-02 Toshiba Corp Complementary mos semiconductor device

Also Published As

Publication number Publication date
JPS5940563A (ja) 1984-03-06

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