JPH0480538B2 - - Google Patents

Info

Publication number
JPH0480538B2
JPH0480538B2 JP58038484A JP3848483A JPH0480538B2 JP H0480538 B2 JPH0480538 B2 JP H0480538B2 JP 58038484 A JP58038484 A JP 58038484A JP 3848483 A JP3848483 A JP 3848483A JP H0480538 B2 JPH0480538 B2 JP H0480538B2
Authority
JP
Japan
Prior art keywords
cell
wiring
metal wiring
layer metal
cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58038484A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59163837A (ja
Inventor
Hiroshi Hara
Kanji Hirabayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP58038484A priority Critical patent/JPS59163837A/ja
Publication of JPS59163837A publication Critical patent/JPS59163837A/ja
Publication of JPH0480538B2 publication Critical patent/JPH0480538B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118Masterslice integrated circuits
    • H01L27/11803Masterslice integrated circuits using field effect technology
    • H01L27/11807CMOS gate arrays
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
JP58038484A 1983-03-09 1983-03-09 半導体集積回路 Granted JPS59163837A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58038484A JPS59163837A (ja) 1983-03-09 1983-03-09 半導体集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58038484A JPS59163837A (ja) 1983-03-09 1983-03-09 半導体集積回路

Publications (2)

Publication Number Publication Date
JPS59163837A JPS59163837A (ja) 1984-09-14
JPH0480538B2 true JPH0480538B2 (de) 1992-12-18

Family

ID=12526528

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58038484A Granted JPS59163837A (ja) 1983-03-09 1983-03-09 半導体集積回路

Country Status (1)

Country Link
JP (1) JPS59163837A (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6022338A (ja) * 1983-07-19 1985-02-04 Nec Ic Microcomput Syst Ltd 半導体集積回路装置
JPS6184030A (ja) * 1984-10-02 1986-04-28 Fujitsu Ltd ゲ−トアレイマスタスライス集積回路装置
EP0177336B1 (de) * 1984-10-03 1992-07-22 Fujitsu Limited Integrierte Gate-Matrixstruktur
JPH07120709B2 (ja) * 1985-03-22 1995-12-20 日本電気株式会社 半導体集積回路の配線方式
JPS61232633A (ja) * 1985-04-09 1986-10-16 Nec Corp 半導体集積回路装置
JPS62119936A (ja) * 1985-11-19 1987-06-01 Fujitsu Ltd コンプリメンタリ−lsiチツプ
US4884115A (en) * 1987-02-27 1989-11-28 Siemens Aktiengesellschaft Basic cell for a gate array arrangement in CMOS Technology
NL194182C (nl) * 1988-07-23 2001-08-03 Samsung Electronics Co Ltd Randloze moederschijf-halfgeleiderinrichting.
JPH0770689B2 (ja) * 1989-02-03 1995-07-31 株式会社東芝 半導体回路
JPH04216668A (ja) * 1990-12-15 1992-08-06 Sharp Corp 半導体集積回路
DE69230019T2 (de) * 1991-07-18 2000-01-05 Fujitsu Ltd Anordnung von Transistoren zur Fertigung einer Basiszelle für eine integrierte Masterslice-Halbleiteranordnung und integrierte Masterslice-Halbleiteranordnung
JPH05136380A (ja) * 1991-11-13 1993-06-01 Nec Ic Microcomput Syst Ltd 半導体集積回路装置
US5384472A (en) * 1992-06-10 1995-01-24 Aspec Technology, Inc. Symmetrical multi-layer metal logic array with continuous substrate taps and extension portions for increased gate density
WO1993026044A1 (en) * 1992-06-10 1993-12-23 Aspec Technology, Inc. Symmetrical multi-layer metal logic array with continuous substrate taps
DE4313053C1 (de) * 1993-04-21 1994-10-06 Siemens Ag Integrierte Halbleiteranordnung mit Verbindungsleitungen, die durch Dotierungsgebiete gegenüber parasitären Effekten unempfindlich sind
JPH08172175A (ja) * 1994-12-19 1996-07-02 Fujitsu Ten Ltd 半導体集積回路

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5929440A (ja) * 1982-08-11 1984-02-16 Hitachi Ltd 半導体集積回路装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5929440A (ja) * 1982-08-11 1984-02-16 Hitachi Ltd 半導体集積回路装置

Also Published As

Publication number Publication date
JPS59163837A (ja) 1984-09-14

Similar Documents

Publication Publication Date Title
CA2126479C (en) Symmetrical multi-layer metal logic array with continuous substrate taps and extension portions for increased gate density
US5341049A (en) Integrated circuit having alternate rows of logic cells and I/O cells
JP3420694B2 (ja) スタンダードセル方式の集積回路
KR100433025B1 (ko) 반도체장치,반도체집적회로장치,플립플롭회로,배타적논리합회로,멀티플렉서및가산기
EP0133958B1 (de) "Master-Slice"-Halbleiteranordnung
KR890004569B1 (ko) 마스터 슬라이스형 반도체장치
JPH02234469A (ja) Cadによってレイアウトされた2金属層集積回路ゲート・アレイ
JP2580301B2 (ja) 半導体集積回路装置
JPH0480538B2 (de)
JPH0527981B2 (de)
JPH0434309B2 (de)
EP0119059B1 (de) Integrierte Halbleiterschaltung mit Gattermatrixstruktur
JPH0120536B2 (de)
JPH0316790B2 (de)
JPH01152642A (ja) 半導体集積回路
JPS60123042A (ja) 半導体集積回路
JPH0114704B2 (de)
JPH023279A (ja) 相補型misマスタスライスlsiの基本セル
JPH0563944B2 (de)
JPH0230163A (ja) マスタスライス型半導体集積回路装置およびその製造方法
JPS60175438A (ja) 半導体集積回路装置
JPS59132144A (ja) 半導体集積回路装置の製造方法
JP2652948B2 (ja) 半導体集積回路
JPH0475665B2 (de)
JPS6248042A (ja) マスタ−スライス方式半導体集積回路