JPH0479147B2 - - Google Patents
Info
- Publication number
- JPH0479147B2 JPH0479147B2 JP58089521A JP8952183A JPH0479147B2 JP H0479147 B2 JPH0479147 B2 JP H0479147B2 JP 58089521 A JP58089521 A JP 58089521A JP 8952183 A JP8952183 A JP 8952183A JP H0479147 B2 JPH0479147 B2 JP H0479147B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor region
- region
- conductivity type
- impurity concentration
- gto
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/60—Gate-turn-off devices
Landscapes
- Thyristors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58089521A JPS59214261A (ja) | 1983-05-20 | 1983-05-20 | ゲ−トタ−ンオフサイリスタ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58089521A JPS59214261A (ja) | 1983-05-20 | 1983-05-20 | ゲ−トタ−ンオフサイリスタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59214261A JPS59214261A (ja) | 1984-12-04 |
| JPH0479147B2 true JPH0479147B2 (enrdf_load_stackoverflow) | 1992-12-15 |
Family
ID=13973101
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58089521A Granted JPS59214261A (ja) | 1983-05-20 | 1983-05-20 | ゲ−トタ−ンオフサイリスタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59214261A (enrdf_load_stackoverflow) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5413313A (en) * | 1977-07-01 | 1979-01-31 | Gen Corp | Method of processing digital signal |
| JPS5917864B2 (ja) * | 1977-09-01 | 1984-04-24 | 株式会社東芝 | 半導体装置 |
| JPS5651868A (en) * | 1979-10-05 | 1981-05-09 | Nec Corp | Semiconductor device |
| JPS5812359A (ja) * | 1981-07-14 | 1983-01-24 | Mitsubishi Electric Corp | 半導体装置 |
-
1983
- 1983-05-20 JP JP58089521A patent/JPS59214261A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59214261A (ja) | 1984-12-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR0161356B1 (ko) | 반도체 장치의 제조방법 | |
| JPH03250670A (ja) | 半導体装置及びその製造方法 | |
| JP2950025B2 (ja) | 絶縁ゲート型バイポーラトランジスタ | |
| JPH023266A (ja) | 導電性再結合層を有するバイポーラ半導体デバイス | |
| JPS61183966A (ja) | サイリスタの製造方法 | |
| JP3072753B2 (ja) | 半導体装置及び製造方法 | |
| JP2579928B2 (ja) | 半導体素子およびその製造方法 | |
| JPH0479147B2 (enrdf_load_stackoverflow) | ||
| JPS6212669B2 (enrdf_load_stackoverflow) | ||
| JP2557818B2 (ja) | 逆導通ゲ−トタ−ンオフサイリスタ装置 | |
| JPH0982955A (ja) | 半導体装置の製法 | |
| JPS584829B2 (ja) | 半導体集積回路 | |
| JP3789580B2 (ja) | 高耐圧半導体装置 | |
| JPS6257250A (ja) | 半導体装置 | |
| JPH03166766A (ja) | 絶縁ゲート型バイポーラトランジスタおよびその製造方法 | |
| JPS61182259A (ja) | ゲ−トタ−ンオフサイリスタ | |
| JP3206149B2 (ja) | 絶縁ゲートバイポーラトランジスタ | |
| JPH04192366A (ja) | 半導体装置及び点火プラグの放電回路 | |
| JPH0136711B2 (enrdf_load_stackoverflow) | ||
| JPS6327865B2 (enrdf_load_stackoverflow) | ||
| JPS60198778A (ja) | スイツチング素子 | |
| JPS6258678A (ja) | トランジスタ | |
| JPH05347406A (ja) | アノードヘテロ接合構造型半導体装置 | |
| US3242551A (en) | Semiconductor switch | |
| JPH0832049A (ja) | 半導体装置 |