JPH0478034B2 - - Google Patents
Info
- Publication number
- JPH0478034B2 JPH0478034B2 JP58104426A JP10442683A JPH0478034B2 JP H0478034 B2 JPH0478034 B2 JP H0478034B2 JP 58104426 A JP58104426 A JP 58104426A JP 10442683 A JP10442683 A JP 10442683A JP H0478034 B2 JPH0478034 B2 JP H0478034B2
- Authority
- JP
- Japan
- Prior art keywords
- active layer
- gaas
- ion implantation
- manufacturing
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Hall/Mr Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58104426A JPS59228783A (ja) | 1983-06-10 | 1983-06-10 | GaAs半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58104426A JPS59228783A (ja) | 1983-06-10 | 1983-06-10 | GaAs半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59228783A JPS59228783A (ja) | 1984-12-22 |
| JPH0478034B2 true JPH0478034B2 (OSRAM) | 1992-12-10 |
Family
ID=14380359
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58104426A Granted JPS59228783A (ja) | 1983-06-10 | 1983-06-10 | GaAs半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59228783A (OSRAM) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63237586A (ja) * | 1987-03-26 | 1988-10-04 | Agency Of Ind Science & Technol | 微小ホ−ル素子の製造方法 |
| JP2589393B2 (ja) * | 1990-02-19 | 1997-03-12 | 旭化成工業株式会社 | GaAsホール素子 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS596054B2 (ja) * | 1978-10-04 | 1984-02-08 | 三菱化成ポリテック株式会社 | 半導体素子の製造方法 |
| JPS5732687A (en) * | 1980-08-06 | 1982-02-22 | Toshiba Corp | Manufacture of magnetoelectric transducer |
-
1983
- 1983-06-10 JP JP58104426A patent/JPS59228783A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59228783A (ja) | 1984-12-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4837178A (en) | Method for producing a semiconductor integrated circuit having an improved isolation structure | |
| US4872040A (en) | Self-aligned heterojunction transistor | |
| US4701422A (en) | Method of adjusting threshold voltage subsequent to fabrication of transistor | |
| JPH0478034B2 (OSRAM) | ||
| US4936781A (en) | Method of fabrication of a P+nn+ diode and of a bipolar transistor incorporating this diode utilizing the effect of neutralization of donor atoms by atomic hydrogen | |
| JPS58197825A (ja) | 半導体保護層形成方法 | |
| JP2611342B2 (ja) | 半導体装置の製造方法 | |
| JP2589393B2 (ja) | GaAsホール素子 | |
| JPS6195570A (ja) | 接合ゲ−ト型電界効果トランジスタ | |
| JPH10173036A (ja) | 半導体装置および半導体の高抵抗化方法 | |
| JPS6064430A (ja) | GaAs系化合物半導体装置の製造方法 | |
| JPS59129483A (ja) | ホ−ル素子 | |
| JP2768184B2 (ja) | 磁電変換素子の製造方法 | |
| JP2709086B2 (ja) | 半導体装置の電極形成方法 | |
| JP2867557B2 (ja) | 半導体装置及びその製造方法 | |
| JPS63314866A (ja) | バイボ−ラ・トランジスタ | |
| JPS59127875A (ja) | シヨツトキ−バリアゲ−ト型電界効果トランジスタの製造方法 | |
| WO1987003742A1 (en) | Mesfet device having a semiconductor surface barrier layer | |
| JPS588590B2 (ja) | ショットキ障壁ゲ−ト型電界効果トランジスタの製造方法 | |
| JPS5955072A (ja) | 半導体装置の製造方法 | |
| JPS59127874A (ja) | 電界効果トランジスタの製造方法 | |
| JPS60733A (ja) | 半導体装置とその製造方法 | |
| JPS5896732A (ja) | イオン注入方法 | |
| JPH01286308A (ja) | GaAs電界効果トランジスタの製造方法 | |
| JPS6122872B2 (OSRAM) |