JPH0478022B2 - - Google Patents

Info

Publication number
JPH0478022B2
JPH0478022B2 JP55164543A JP16454380A JPH0478022B2 JP H0478022 B2 JPH0478022 B2 JP H0478022B2 JP 55164543 A JP55164543 A JP 55164543A JP 16454380 A JP16454380 A JP 16454380A JP H0478022 B2 JPH0478022 B2 JP H0478022B2
Authority
JP
Japan
Prior art keywords
gate
drain
capacitance
mos structure
mosfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP55164543A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5788774A (en
Inventor
Noboru Myamoto
Eiichiro Sato
Mitsunori Karasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP55164543A priority Critical patent/JPS5788774A/ja
Publication of JPS5788774A publication Critical patent/JPS5788774A/ja
Publication of JPH0478022B2 publication Critical patent/JPH0478022B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
  • Amplifiers (AREA)
JP55164543A 1980-11-25 1980-11-25 Semiconductor device Granted JPS5788774A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55164543A JPS5788774A (en) 1980-11-25 1980-11-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55164543A JPS5788774A (en) 1980-11-25 1980-11-25 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5788774A JPS5788774A (en) 1982-06-02
JPH0478022B2 true JPH0478022B2 (enEXAMPLES) 1992-12-10

Family

ID=15795149

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55164543A Granted JPS5788774A (en) 1980-11-25 1980-11-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5788774A (enEXAMPLES)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59171157A (ja) * 1983-03-18 1984-09-27 Hitachi Ltd 半導体装置
JPH0793408B2 (ja) * 1986-03-20 1995-10-09 富士通株式会社 集積回路装置
US4786881A (en) * 1987-08-27 1988-11-22 General Electric Company Amplifier with integrated feedback network
JPH08298292A (ja) * 1996-06-14 1996-11-12 Matsushita Electron Corp 半導体集積回路
JP2007273689A (ja) * 2006-03-31 2007-10-18 Denso Corp 半導体装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5369589A (en) * 1976-12-03 1978-06-21 Mitsubishi Electric Corp Insulating gate type field effect transistor with protective device

Also Published As

Publication number Publication date
JPS5788774A (en) 1982-06-02

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