JPH0476355B2 - - Google Patents
Info
- Publication number
- JPH0476355B2 JPH0476355B2 JP63042506A JP4250688A JPH0476355B2 JP H0476355 B2 JPH0476355 B2 JP H0476355B2 JP 63042506 A JP63042506 A JP 63042506A JP 4250688 A JP4250688 A JP 4250688A JP H0476355 B2 JPH0476355 B2 JP H0476355B2
- Authority
- JP
- Japan
- Prior art keywords
- concentration
- crystal
- gaas
- semi
- insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 claims description 65
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 39
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 22
- 229910052799 carbon Inorganic materials 0.000 claims description 20
- 239000012535 impurity Substances 0.000 claims description 14
- -1 GaAs compound Chemical class 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 230000007547 defect Effects 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 43
- 239000000370 acceptor Substances 0.000 description 13
- 235000012431 wafers Nutrition 0.000 description 13
- 238000005259 measurement Methods 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000000155 melt Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000005204 segregation Methods 0.000 description 3
- 238000007711 solidification Methods 0.000 description 3
- 230000008023 solidification Effects 0.000 description 3
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 238000004949 mass spectrometry Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910018885 Pt—Au Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4250688A JPH01215799A (ja) | 1988-02-24 | 1988-02-24 | 半絶縁性ＧａＡｓ化合物半導体単結晶及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4250688A JPH01215799A (ja) | 1988-02-24 | 1988-02-24 | 半絶縁性ＧａＡｓ化合物半導体単結晶及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01215799A JPH01215799A (ja) | 1989-08-29 |
| JPH0476355B2 true JPH0476355B2 (fr) | 1992-12-03 |
Family
ID=12637950
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4250688A Granted JPH01215799A (ja) | 1988-02-24 | 1988-02-24 | 半絶縁性ＧａＡｓ化合物半導体単結晶及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01215799A (fr) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01239089A (ja) * | 1987-11-30 | 1989-09-25 | Toshiba Corp | 化合物半導体単結晶の製造方法及び製造装置 |
| JPH08758B2 (ja) * | 1988-09-08 | 1996-01-10 | 日立電線株式会社 | クロムドープ半絶縁性ガリウム・ヒ素単結晶の製造方法 |
| JP4691909B2 (ja) * | 2004-06-09 | 2011-06-01 | 住友電気工業株式会社 | 半導体結晶の製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63201097A (ja) * | 1987-02-13 | 1988-08-19 | Sumitomo Electric Ind Ltd | 半絶縁性ガリウム砒素単結晶 |
-
1988
- 1988-02-24 JP JP4250688A patent/JPH01215799A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63201097A (ja) * | 1987-02-13 | 1988-08-19 | Sumitomo Electric Ind Ltd | 半絶縁性ガリウム砒素単結晶 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01215799A (ja) | 1989-08-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |