JPH0557239B2 - - Google Patents
Info
- Publication number
- JPH0557239B2 JPH0557239B2 JP60041881A JP4188185A JPH0557239B2 JP H0557239 B2 JPH0557239 B2 JP H0557239B2 JP 60041881 A JP60041881 A JP 60041881A JP 4188185 A JP4188185 A JP 4188185A JP H0557239 B2 JPH0557239 B2 JP H0557239B2
- Authority
- JP
- Japan
- Prior art keywords
- concentration
- gaas
- resistance
- crystal
- impurity levels
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 claims description 47
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 41
- 239000012535 impurity Substances 0.000 claims description 28
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 229910052785 arsenic Inorganic materials 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 claims description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 37
- 238000000034 method Methods 0.000 description 22
- 235000012431 wafers Nutrition 0.000 description 16
- 238000007711 solidification Methods 0.000 description 12
- 230000008023 solidification Effects 0.000 description 12
- 230000007547 defect Effects 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 9
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 7
- 229910052804 chromium Inorganic materials 0.000 description 7
- 239000011651 chromium Substances 0.000 description 7
- 239000002994 raw material Substances 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 241000981595 Zoysia japonica Species 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010893 electron trap Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000004677 spark ionization mass spectrometry Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4188185A JPS61201700A (ja) | 1985-03-05 | 1985-03-05 | 高抵抗ＧａＡｓ結晶およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4188185A JPS61201700A (ja) | 1985-03-05 | 1985-03-05 | 高抵抗ＧａＡｓ結晶およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61201700A JPS61201700A (ja) | 1986-09-06 |
| JPH0557239B2 true JPH0557239B2 (fr) | 1993-08-23 |
Family
ID=12620613
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4188185A Granted JPS61201700A (ja) | 1985-03-05 | 1985-03-05 | 高抵抗ＧａＡｓ結晶およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61201700A (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110373710A (zh) * | 2019-07-09 | 2019-10-25 | 有研光电新材料有限责任公司 | 水平法砷化镓单晶尾部位错密度的降低方法 |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61222999A (ja) * | 1985-03-27 | 1986-10-03 | Dowa Mining Co Ltd | ３−ｖ族化合物半導体単結晶の電気的特性改良方法 |
| JPS63195199A (ja) * | 1987-02-05 | 1988-08-12 | Dowa Mining Co Ltd | ガリウム砒素結晶の製造方法 |
| JPH0714077U (ja) * | 1993-03-31 | 1995-03-10 | 利夫 原田 | 開き戸 |
| JP7012431B2 (ja) * | 2014-07-17 | 2022-01-28 | 住友電気工業株式会社 | ＧａＡｓ単結晶 |
| CN113847183B (zh) * | 2021-09-23 | 2022-09-30 | 上海鑫歆源电子有限公司 | 一种热量控制模块、驱动电路及点火线圈驱动器 |
-
1985
- 1985-03-05 JP JP4188185A patent/JPS61201700A/ja active Granted
Non-Patent Citations (2)
| Title |
|---|
| APPL.PHYS.LETT.=1982 * |
| SEMI-INSULATING 3-5 MATERIALS * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110373710A (zh) * | 2019-07-09 | 2019-10-25 | 有研光电新材料有限责任公司 | 水平法砷化镓单晶尾部位错密度的降低方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61201700A (ja) | 1986-09-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |